ST P12NM50FP 500V 12A TO-220 N Channel MOSFET
Regular price
Rs.150.00
Sale price
Rs.165.00
P12NM50FP
The P12NM50FP is an N‑channel power MOSFET rated at 500 V and 12 A, designed for industrial and commercial power electronics. It is suitable for applications including solar inverters, motor drives, UPS systems, and electric vehicle controllers. The MOSFET features low R<sub>DS(on)</sub> and fast switching, which reduces conduction losses and improves efficiency in high-frequency circuits. Its avalanche capability provides durability under high voltage conditions.
The device is housed in a TO‑220FP (full-pack) package, providing effective thermal performance and supporting junction temperatures up to 150 °C. Its low gate charge allows efficient switching and precise control, making it compatible with a variety of power management systems.
The P12NM50FP is used in industrial automation and power supply applications where stable electrical performance and thermal reliability are required. Its consistent characteristics allow for predictable operation in high-stress environments and long-term use.
Key Specs
| Parameter | Specification |
|---|---|
| Drain‑Source Voltage (V<sub>DSS</sub>) | 500 V (ST Datasheet) |
| Continuous Drain Current (I<sub>D</sub>) | 12 A at T<sub>C</sub> = 25 °C (ST Datasheet) |
| Pulsed Drain Current (I<sub>DM</sub>) | 48 A (pulse) (ST Datasheet) |
| On‑Resistance (R<sub>DS(on)</sub>) | Typ. 0.30 Ω, Max 0.35 Ω at V<sub>GS</sub>=10 V (ST Datasheet) |
| Gate‑Source Threshold Voltage (V<sub>GS(th)</sub>) | ±30 V (ST Datasheet) |
| Total Gate Charge (Q<sub>g</sub>) | ~39 nC at V<sub>GS</sub> = 10 V (ST Datasheet) |
| Input Capacitance (C<sub>iss</sub>) | ~1,000 pF (ST Datasheet) |
| Power Dissipation (P<sub>D</sub>) | 35 W at T<sub>C</sub> = 25 °C (ST Datasheet) |
| Operating Junction Temperature (T<sub>J</sub>) | –65 °C to +150 °C (ST Datasheet) |
| Avalanche Energy (E<sub>AS</sub>) | ≈ 400 mJ (single pulse) (ST Datasheet) |
| Package | TO‑220FP (full pack) (ST Datasheet) |
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