NSi6602A Dual Channel Isolated Gate Driver IC

NSi6602A Isolated Dual‑Channel Gate Driver IC – Up to 2 MHz Switching, SOP‑16 Package

The NSi6602A is a dual-channel isolated gate driver IC designed for driving MOSFETs or IGBTs at switching frequencies up to 2 MHz. Each channel can source up to 4 A and sink up to 6 A peak, featuring ultra-fast propagation delays of approximately 25 ns and delay matching under 5 ns—ideal for synchronous power conversion systems.

Delivering reinforced isolation up to 5,700 Vrms (in SOP‑16 or SOW‑16 packages) and high common-mode transient immunity of ±150 kV/µs, the NSi6602A is designed to withstand harsh industrial EMI environments. It supports input-side voltages from 2.7 V to 5.5 V and driver-side up to 25 V with integrated under-voltage lockout (UVLO) protection on all VDD pins.

This IC is available in compact SOP‑16 (300 mil), SOP‑16 (150 mil), and LGA13 packages, certified for safety compliance under UL1577, DIN VDE V 0884‑11, CSA, and CQC standards, and rated for operation from −40 °C to +125 °C.

Key Specs Input Supply: 2.7 V – 5.5 V Driver Supply: Up to 25 V with UVLO Output Drive: 4 A source, 6 A sink (peak) per channel Switching Frequency: Up to 2 MHz Propagation Delay: ~25 ns (typ), ≤5 ns delay matching Common-Mode Transient Immunity: ±150 kV/µs (Typ) Isolation Rating: Up to 5,700 Vrms (in SOP16/SOW16 package) Packaging: SOP‑16 (150/300 mil), SOW‑16, SOW‑14, LGA13 Operating Temp: −40 °C to +125 °C Safety Certifications: UL1577, VDE, CSA, CQC Compliance: RoHS & REACH Qualified