NCEP85T16 MOSFET
The NCEP85T16 is an N‑Channel Super Trench MOSFET suitable for high-frequency switching in power electronics. With an 85 V drain-to-source voltage and a continuous drain current of 160 A, this MOSFET provides low conduction and switching losses, making it ideal for DC/DC converters, synchronous rectification, and industrial power systems. Its Super Trench structure minimizes R${\text{DS(on)}}$ and total gate charge (Q${\text{G}}$), improving efficiency and reducing thermal load in electrical circuits.
This MOSFET supports high-current operation and precise switching, featuring an on-resistance of less than 3.8 mΩ at V${\text{GS}}$ = 10 V and a junction-to-case thermal resistance of 0.6 °C/W. Operating over a wide temperature range from ‑55 °C to 175 °C, the NCEP85T16 ensures reliable performance in commercial and industrial systems such as motor drives, server power supplies, and renewable energy inverters. Its fast switching characteristics and low gate charge reduce energy loss and enable compact, efficient circuit designs.
The NCEP85T16 can be used in applications requiring efficient high-frequency switching, low conduction loss, and high durability. Its compact TO-220-3L package with Pb-free lead plating allows straightforward integration in power modules and converters. The MOSFET includes a robust diode with low forward voltage and fast reverse recovery, supporting high-performance rectification. For more detailed technical information, please refer to the NCE Power datasheet: NCEP85T16 Datasheet.
Key Specs
| Parameter | Value | Unit |
|---|---|---|
| Drain‑Source Voltage (V${\text{DS}}$) | 85 | V |
| Gate‑Source Voltage (V${\text{GS}}$) | ±20 | V |
| Continuous Drain Current (I${\text{D}}$) | 160 | A |
| On-Resistance R${\text{DS(on)}}$ @ V${\text{GS}}$=10 V, I${\text{D}}$=80 A | < 3.8 | mΩ |
| Maximum Power Dissipation (P${\text{D}}$) | 220 | W |
| Operating Temperature (T${\text{J}}$/T${\text{STG}}$) | -55 to 175 | °C |
| Input Capacitance C${\text{iss}}$ @ V${\text{DS}}$=40 V, F=1 MHz | 8,500 | pF |
| Total Gate Charge Q${\text{G}}$ | 105 | nC |
| Thermal Resistance, Junction-to-Case R${\text{thJC}}$ | 0.6 | °C/W |
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