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NCEP15T14 150V 140A N Channel MOSFET

Regular price Rs.110.00
Sale price Rs.140.00
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NCEP15T14 150V 140A N Channel MOSFET
NCEP15T14 150V 140A N Channel MOSFET
Regular price Rs.110.00
Sale price Rs.140.00

NCEP15T14

The NCEP15T14 is an N‑channel Super‑Trench power MOSFET designed for demanding power‑electronics systems. Using advanced Super‑Trench technology, it provides efficient switching with ultra-low on-resistance and optimized gate charge. It is suitable for high-frequency applications such as DC/DC converters, synchronous rectification, and power supply designs, offering reliable operation under industrial and commercial conditions.

With a drain-to-source voltage of 150 V and a continuous drain current up to 140 A in a TO-220‑3L package, the NCEP15T14 supports heavy-duty applications. Its low on-state resistance — ≤ 6.2 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 70 A — reduces conduction losses, while the optimized gate charge ensures fast and efficient switching. The device can operate at junction temperatures up to 175 °C and undergoes full factory testing to meet reliability standards.

The NCEP15T14 helps achieve efficient system designs by minimizing heat generation and reducing cooling requirements. Its combination of low conduction and switching losses improves power density and operational lifetime. It is suitable for server power supplies, telecom rectifiers, motor drives, and renewable energy converters, providing consistent performance in industrial and commercial power electronics.


Key Specifications

Parameter Symbol Value Unit
Drain‑to‑Source Voltage V<sub>DS</sub> 150 V
Gate‑to‑Source Voltage V<sub>GS</sub> ±20 V
Continuous Drain Current (T<sub>C</sub> = 25 °C) I<sub>D</sub> 140 A
On‑State Resistance (V<sub>GS</sub> = 10 V, I<sub>D</sub> = 70 A) R<sub>DS(on)</sub> ≤ 6.2
Total Gate Charge (V<sub>DS</sub> = 75 V, I<sub>D</sub> = 70 A) Q<sub>g</sub> 80 nC
Maximum Junction Temperature T<sub>J</sub> 175 °C
Maximum Power Dissipation (T<sub>C</sub> = 25 °C) P<sub>D</sub> 320 W
Thermal Resistance, Junction‑to‑Case R<sub>θJC</sub> 0.47 °C/W


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