G60N100BNTD 1000V 60A NPT Trench IGBT

Key Features of the G60N100BNTD IGBT

The G60N100BNTD IGBT Transistor is engineered for high-voltage power electronics, delivering a 1000V and 60A capacity. Using Fairchild’s Non-Punch Through (NPT) trench technology, this component ensures minimal energy loss with high-speed switching and a low 2.5V saturation voltage at 60A. Its built-in fast recovery diode reduces switching losses, ideal for uninterruptible power supplies (UPS), welding equipment, and motor drives. Housed in a durable TO-264 package, this module offers high avalanche ruggedness and supports easy parallel operation, making it a reliable choice for scalable industrial solutions.

Why Choose This Power Device?

This semiconductor excels in high-voltage applications, offering consistent reliability via advanced NPT technology. Its high input impedance and low on-state voltage drop enable energy-efficient designs for renewable energy systems and motor control units, meeting the needs of engineers.

Applications

This power device supports mission-critical systems like UPS, welding machines, and industrial motor drives. Its rugged design and parallel configuration compatibility make it a versatile solution for large-scale power electronics projects requiring dependable, high-speed switching.