G60N100BNTD 1000V 60A NPT Trench IGBT

G60N100BNTD IGBT – 1000V 60A NPT Trench IGBT

The G60N100BNTD IGBT is a 1000V, 60A high-performance power transistor built with Fairchild’s advanced Non-Punch Through (NPT) trench technology. This IGBT ensures low switching losses, high-speed operation, and a low saturation voltage of just 2.5V at 60A, making it ideal for power-intensive applications such as UPS systems, industrial motor drives, welding equipment, and renewable energy platforms.

Encased in a TO-264 package, the G60N100BNTD features high avalanche ruggedness and supports parallel configuration for scalable power systems. Its integrated fast recovery diode enhances efficiency in high-frequency operations, delivering dependable thermal stability and reduced conduction losses across a wide range of environments.

Engineered for industrial automation, power backup systems, and high-voltage energy infrastructure, the G60N100BNTD IGBT provides the durability, speed, and energy efficiency required in modern B2B power electronics.

Key Specs Type: NPT Trench IGBT Voltage Rating: 1000V Current Rating: 60A Technology: Non-Punch Through (NPT) Package: TO-264 Switching: Fast Switching with Low Loss Applications: UPS Systems, Motor Drives, Welders, Solar Inverters Operating Temp Range: -55°C to +150°C