IRFR120 100V 7.7A N Channel MOSFET
Regular price
Rs.150.00
Sale price
Rs.170.00
IRFR120
The IRFR120 is a first-rate, N‑channel power MOSFET from Vishay (Silicon ix) designed to deliver impressive performance in demanding power-electronic systems. With a drain-to-source voltage rating of 100 V and a continuous current capability of 7.7 A, it offers reliable operation in compact yet high-powered designs. Its low on-resistance (Rₙ₋ₒₙ) and fast switching behavior help reduce conduction and switching losses, boosting overall system efficiency. Engineers will appreciate its rugged design and consistent performance in applications such as motor drivers, DC‑DC converters, and regulated power supplies.
Built into a TO‑252 (DPAK) surface-mount package, the IRFR120 enables space-efficient circuit layouts without compromising thermal handling. The low gate charge (Qg ≈ 16 nC at 10 V) ensures stable and rapid switching in high-frequency applications, minimizing gate drive energy. Its repetitive avalanche rating and strong dV/dt immunity further contribute to the robustness needed for industrial environments. Despite its high performance, the MOSFET remains cost-effective, making it a go-to choice for power-conscious designs.
In industrial and commercial systems—from telecommunications infrastructure to automation equipment—the IRFR120 stands out for its dependability and durability. Its combination of fast switching, low Rₙ₋ₒₙ, and compact packaging allows designers to build energy‑sensitive, space-constrained systems without sacrificing reliability. Whether driving motors, regulating voltage rails, or handling switching power loads, this MOSFET delivers steady performance under stress and long operational life.
Key Specifications
| Parameter | Value |
|---|---|
| Drain‑Source Voltage (Vₙ₋ₙₒ) | 100 V |
| Continuous Drain Current (Iₙₙ) | 7.7 A (at case) |
| On‑Resistance (Rₙ₋ₒₙ) | 0.27 Ω @ V_GS = 10 V |
| Gate Charge (Qᵍ) | ~16 nC @ V_GS = 10 V |
| Gate‑Source Threshold Voltage (Vₙₕₙₕ) | 2–4 V |
| Maximum Gate‑Source Voltage (V_GS) | ± 20 V |
| Input Capacitance (Cᵢₙₙ) | ~360 pF @ V_DS = 25 V |
| Power Dissipation | 2.5 W (ambient), 42 W (case) |
| Thermal Resistance | Junction-to-Case: ~3.0 °C/W; Junction-to-Ambient (PCB): ~50 °C/W |
| Operating Temperature Range | –55 °C … +150 °C (junction) |
| Package | TO-252 / DPAK (surface‑mount) |
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