Home MDS100A1600V 1600V 100A IGBT Module
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MDS100 16 high power semiconductor modules with metal terminals on gray surface
MDS100 16 three phase rectifier bridge with voltage and current specifications from The Component Centre
MDS100 16 performance curves and characteristic graphs from The Component Centre datasheet
Technical drawing and dimensions of MDS100 16 electronic component showing measurements in millimeters

MDS100A1600V 1600V 100A IGBT Module

Regular price Rs.1,900.00 Sale price Rs.1,799.00
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MDS100 16 high power semiconductor modules with metal terminals on gray surface

MDS100A1600V 1600V 100A IGBT Module

Rs.1,799.00

MDS100A1600V  IGBT Module – 1600V, 100A

The MDS100A1600V is a high-performance IGBT module designed for demanding industrial and commercial power electronics applications. With a collector-emitter voltage rating of 1600V and a continuous collector current of 100A, this module offers reliable switching capabilities for inverters, motor drives, and uninterruptible power supplies (UPS). Its compact design ensures easy integration into existing systems, making it suitable for various industrial environments.

This module features low VCE(sat) trench IGBT technology, resulting in reduced conduction losses and improved efficiency. The fast and soft reverse recovery anti-parallel diode enhances overall performance by minimizing switching losses. Additionally, the MDS100A1600V boasts a 10µs short-circuit capability, providing robust protection against transient faults and ensuring the longevity of connected components.

Built with an isolated heatsink using Direct Bonded Copper (DBC) technology, the MDS100A1600V ensures effective thermal management, maintaining optimal operating temperatures even under high load conditions. Its positive temperature coefficient VCE(sat) allows for safe paralleling of modules, offering flexibility in system design. This module is ideal for applications requiring high reliability and efficiency in power conversion systems.

Key Specifications!

Specification Value
Collector–Emitter Voltage (V_CES) 1600 V
Collector Current (I_C) 100 A
Pulsed Collector Current (I_CP) 200 A
Saturation Voltage (V_CE(sat)) 1.7 – 2.15 V
Gate Emitter Voltage (V_GE) ±20 V
Junction Temperature (T_j) 150°C
Power Dissipation (P_D) 400 W
Package Type 6 in one-package
Applications Inverters, Motor Drives, UPS

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