IRG4BC20UD IGBT
The IRG4BC20UD is a 600 V, 14 A insulated gate bipolar transistor (IGBT) from International Rectifier, featuring an integrated ultrafast soft-recovery diode. It is designed to reduce conduction losses and heat generation with a typical saturation voltage of 1.85 V, supporting high-frequency operation in industrial, renewable, and automotive power systems.
The device is suitable for high-frequency switching applications, including hard-switching up to 40 kHz and resonant switching above 200 kHz. Its Generation 4 IGBT structure ensures consistent performance across applications. The integrated HEXFRED™ diode offers fast soft-recovery characteristics, which helps reduce electromagnetic interference (EMI) in power circuits.
Housed in a TO‑220AB package, the IRG4BC20UD provides efficient thermal performance with junction-to-case thermal resistances of 2.1 °C/W (IGBT) and 3.5 °C/W (diode). It operates reliably in a wide temperature range of −55 °C to +150 °C , making it suitable for motor drives, solar inverters, EV power systems, UPS, and industrial automation.
Key Specifications
| Specification | Value |
|---|---|
| Collector‑Emitter Voltage (V<sub>CES</sub>) | 600 V |
| Continuous Collector Current (I<sub>C</sub>) @ 25 °C | 13 A |
| Continuous Collector Current (I<sub>C</sub>) @ 100 °C | 6.5 A |
| Pulsed Collector Current (I<sub>CM</sub>) | 52 A |
| Diode Continuous Forward Current (I<sub>F</sub>) @ 100 °C | 7 A |
| Diode Maximum Forward Current (I<sub>FM</sub>) | 52 A |
| Gate‑Emitter Voltage (V<sub>GE</sub>) | ± 20 V |
| V<sub>CE(on)</sub> Typical | 1.85 V @ V<sub>GE</sub>=15 V, I<sub>C</sub>=6.5 A |
| Max Power Dissipation (P<sub>D</sub>) @ 25 °C | 60 W |
| Max Power Dissipation (P<sub>D</sub>) @ 100 °C | 24 W |
| Thermal Resistance Junction‑to‑Case (IGBT) | 2.1 °C/W |
| Thermal Resistance Junction‑to‑Case (Diode) | 3.5 °C/W |
| Operating Junction / Storage Temperature | –55 °C to +150 °C |
| Package | TO‑220AB |
| Switching Frequency Range | 8–40 kHz (hard‑switch), >200 kHz (resonant) |
| Technology Generation | Generation 4 IGBT with HEXFRED ultrafast soft recovery diode |
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