IRFB52N15D MOSFET – 150V 51A N-Channel Power Transistor (TO-220AB)
IRFB52N15D is a 150V N-Channel power MOSFET designed for high-efficiency switching applications in industrial and commercial systems. Manufactured using HEXFET technology, this device offers a low RDS(on) of 32mΩ and supports a continuous drain current of 51A, making it suitable for power circuits where low conduction loss is required. With a total power dissipation of up to 230W and a gate charge of 60nC at 10V, the MOSFET enables fast switching while minimizing gate drive requirements.
The TO-220AB package provides compatibility with standard heatsinking and through-hole assembly, allowing for thermal management in power-dense applications. This MOSFET supports reliable operation in high-frequency DC-DC converters, inverters, motor control systems, and power supply circuits. Its avalanche energy handling and wide safe operating area contribute to stable operation under surge and transient conditions.
IRFB52N15D is suitable for use in power management systems, industrial automation, renewable energy inverters, and automotive control electronics where robust N-Channel MOSFETs are required.
Key Specs Voltage Rating: 150V Current Rating: 51A Continuous Technology: N-Channel, HEXFET Planar Package: TO-220AB On-Resistance: 32mΩ Gate Charge: 60nC @ 10V Power Dissipation: 230W Max Switching: Fast with Avalanche Ruggedness Applications: DC-DC Converters, Motor Drives, Inverters, Power Supplies, Renewable Energy Systems Brand: Infineon Technologies Compliance: RoHS & Pb-Free
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