Infineon BSM200GB120DN2 200A 1200V IGBT Module

Infineon BSM200GB120DN2 IGBT Power Module

The Infineon BSM200GB120DN2 is a robust and efficient IGBT (Insulated Gate Bipolar Transistor) power module designed to meet the demanding requirements of industrial and commercial applications. With its dual half-bridge configuration, this module delivers exceptional performance in power switching, making it ideal for inverters, motor drives, and industrial power supplies.

This module supports a collector-emitter voltage of 1200V and a continuous collector current of 200A at 80°C, ensuring reliable operation under high-power conditions. It includes fast freewheeling diodes, which enhance efficiency and reduce switching losses in power conversion applications. Featuring a typical collector-emitter saturation voltage of 2.5V, it minimizes conduction losses and improves overall system efficiency. The BSM200GB120DN2 operates effectively within a temperature range of -40°C to +150°C, making it suitable for diverse industrial environments. Its durable half-bridge package with an insulated metal base plate provides mechanical robustness and efficient thermal management, ensuring long-term reliability.

The BSM200GB120DN2 is engineered for high-power applications such as motor drives, industrial power supplies, renewable energy inverters, uninterruptible power supplies (UPS), and HVAC systems. Its high voltage and current ratings, combined with efficient thermal performance, make it a preferred choice for demanding power electronics applications.

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