onsemi FGY160T65SPD 650V 160A IGBT

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onsemi FGY160T65SPD 650V 160A IGBT
onsemi FGY160T65SPD 650V 160A IGBT
Regular price Rs.400.00

onsemi FGY160T65SPD IGBT

The FGY160T65SPD-F085 from onsemi is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications. Built with Field-Stop and Trench technology and co-packaged with a soft fast-recovery diode, this 650 V / 160 A device provides efficient, reliable, and thermally stable operation. It is suitable for systems requiring high current, fast switching, and long-term reliability, such as industrial motor drives, inverters, and electric vehicle traction inverters.

The device operates up to a junction temperature of 175 °C and offers short-circuit ruggedness greater than 6 µs at 25 °C. Its low saturation voltage (V_CE(sat) ≈ 1.6 V at 160 A) and low switching losses make it suitable for high-efficiency power systems. The positive temperature coefficient supports safe parallel operation by helping prevent thermal runaway. Tight parameter distribution ensures balanced current sharing when multiple devices are used in parallel.

This IGBT is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive and industrial applications. Typical use cases include EV/HEV traction inverters, auxiliary DC/AC converters, motor drives, and general power-train switches. It is Pb-free, halogen-free, and RoHS compliant, meeting standard industry safety and environmental requirements.


Key Specifications

Parameter Value
Collector–Emitter Voltage (V_CES) 650 V 
Nominal Collector Current 160 A 
Maximum Collector Current (T_C = 25 °C) 240 A 
Pulsed Collector Current (I_CM) 480 A 
Saturation Voltage V_CE(sat) 1.60 V (typical) at 160 A, V_G_E = 15 V
Saturation Voltage at 175 °C 2.15 V 
Maximum Junction Temperature (T_J) 175 °C 
Short-Circuit Withstand Time > 6 µs @ 25 °C 
Switching Energy (at 400 V, 160 A) Turn-on ≈ 12.4 mJ, Turn-off ≈ 5.7 mJ 
Turn-On Delay / Turn-Off Delay (25 °C) 53 ns / 98 ns 
Reverse Recovery Time (t_rr) 132 ns 
Thermal Resistance (Junction-to-Case) IGBT: 0.17 °C/W, Diode: 0.32 °C/W
Package TO-247-3LD (Case 340CU)
Qualification AEC-Q101, PPAP capable


For more detailed information, please refer to the onsemi datasheet: FGY160T65SPD-F085 Datasheet (PDF).

We dispatch all orders through Leopard Courier and TCS, while bulk or heavy shipments are sent via cargo (bilty) for safer handling and better rates. Standard delivery time is 2–3 working days for both courier and cargo deliveries, depending on your location. Orders are dispatched within 24 hours after payment confirmation, and the tracking number is shared on WhatsApp once shipped. Shipping charges depend on parcel weight and destination, and may be waived for bulk or corporate orders. Please ensure your contact details and address are accurate to avoid delays. For urgent delivery or specific shipping requirements, contact us directly on WhatsApp at 0303 56888 44.

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