FGH75T65SQDNL4 is a high-efficiency Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Featuring advanced Field Stop IV/4 Lead technology, it reduces switching losses and improves overall performance. The TO-247-4L package minimizes energy losses compared to standard TO-247-3L designs, making it ideal for solar inverters, UPS systems, and neutral point clamp topology.
This IGBT operates at 650V and 75A, ensuring reliability in demanding applications. It features an optimized gate control mechanism that lowers switching losses, along with a separate emitter drive pin for enhanced efficiency. The Pb-free package complies with environmental standards, and all units undergo 100% factory testing for quality assurance.
Absolute Maximum Ratings:
â–º Collector-Emitter Voltage (V<sub>CE</sub>): 650V
► Collector Current (I<sub>C</sub>): 75A (T<sub>c</sub> = 25°C), 70A (T<sub>c</sub> = 100°C)
► Diode Pulsed Current (I<sub>Fp</sub>): 200A
► Gate-Emitter Voltage (V<sub>GE</sub>): ±20V
► Power Dissipation (P<sub>D</sub>): 375W (T<sub>c</sub> = 25°C), 100W (T<sub>c</sub> = 100°C)
► Operating Junction Temperature (T<sub>j</sub>): -55°C to 175°C
This IGBT is available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, Peshawar, and more. A datasheet is attached for detailed technical specifications.
For bulk orders or B2B inquiries, contact us on 0303-5688844.