BLF177 RF MOSFET Transistor 125V 16A 220W

BLF177 RF MOSFET Transistor 125V 16A 220W

BLF177 RF MOSFET, designed by NXP Semiconductors (now Ampleon), is a high-performance N-channel enhancement mode vertical D-MOS transistor engineered for high-power HF/VHF applications. With a maximum drain-source voltage of 125V, continuous drain current of 16A, and power dissipation of 220W, it excels in demanding environments like telecommunications, military, and industrial systems. Its robust 4-lead SOT-121B flanged package with a ceramic cap ensures low intermodulation distortion, high reliability, and excellent thermal stability, even under full load mismatch conditions. The BLF177 RF MOSFET is ideal for broadband RF amplifiers, radar, and communication systems, offering high power gain (up to 22dB at 30MHz, 14dB at 175MHz) and efficiency (up to 70% in class-B at 108MHz). Operating from 1MHz to 108MHz, it meets the needs of engineers and purchasing departments seeking high-reliability transistors. This product is available on order only. For bulk inquiries or to place an order, contact us at 0303-56888-44. Why Choose BLF177 RF MOSFET for Your Projects?
The BLF177 RF MOSFET stands out for its high power output, gain, and durability, making it a top choice for RF power devices in critical applications. Its ability to handle high-power RF signals and maintain performance across a wide frequency range ensures longevity in systems like HF/VHF amplifiers and radar equipment. This product is available on order only. Contact us at 0303-56888-44 for competitive pricing. Applications of BLF177 RF MOSFET in Industry
Engineered for versatility, the BLF177 RF MOSFET powers high-performance RF amplifiers, communication systems, and military-grade equipment. Its high power gain and efficiency make it a reliable choice for broadband RF applications. For bulk orders or quotes, call 0303-56888-44 today.