Ampleon BLF182XR 250W LDMOS Transistor

BLF182XR Power LDMOS Transistor – 250 W Rugged RF Amplifier Device

The BLF182XR is a 250 W LDMOS transistor by Ampleon, designed for demanding broadcast and industrial use in the HF to 600 MHz frequency band. It delivers exceptional drain efficiency up to 75%, a power gain of 26.8–28 dB, and withstands harsh RF environments with integrated double‑sided ESD protection and rugged construction.

This RF transistor features high thermal stability and wide operating capability under high VSWR. It has a bias voltage of 50 V and operates reliably across commercial and industrial temperature ranges.

Engineered for efficiency and reliable control, the BLF182XR offers straightforward power control and premium thermal behavior. It is ideal for high-power HF to VHF amplifiers such as broadcast transmitters, ISM systems, and industrial RF power generation.

Key Specs Power Output (PL₁dB): 250 W Pulse Frequency Range: 10–600 MHz Voltage Rating: VDS = 50 V Power Gain: 26.8–28 dB Drain Efficiency: up to 75% Package: SOT‑1121A (ACC‑780) Transistor Type: Si LDMOS (RF LDMOS) ESD Protection: Integrated double‑sided Applications: Broadcast Transmitters, ISM RF, Industrial RF Heating, Communication Amplifiers Brand: Ampleon (formerly NXP / Philips RF Power) Compliance: RoHS Compliant