Ampleon BLF177 150W 50V RF Transistor

BLF177 150 W 50 V RF Power MOSFET – SOT‑121B Package by Ampleon

The BLF177 is a high-power, N-Channel VDMOS RF transistor designed for broadband RF amplifier applications across the 1 MHz to 108 MHz range, with typical usability up to 175 MHz. Operating at 50 V, it delivers 150 W output power in both CW and PEP modes, making it suitable for FM broadcasting, industrial RF heating, and military communication systems. With a typical power gain of 19–20 dB and drain efficiency around 70%, it supports high-efficiency linear and Class-B designs.

Packaged in a flanged SOT-121B ceramic module with a beryllium oxide (BeO) substrate, the BLF177 ensures excellent thermal conductivity and long-term reliability. It is capable of withstanding full load mismatches and delivers low intermodulation distortion, making it ideal for rugged environments. The transistor is RoHS compliant and widely used in high-reliability RF designs.

Key Specs Frequency Range: 1–108 MHz (up to ~175 MHz typical) Output Power: 150 W (CW/PEP) @ VDS = 50 V Power Gain: ~20 dB @ 28 MHz; ~19 dB @ 108 MHz Drain Efficiency: ~70% @ 108 MHz Drain-Source Voltage (VDS): 50 V nominal, 110 V max Drain Current (ID): 16 A max Power Dissipation: 220 W @ Tmb = 25°C Package: SOT-121B (flanged ceramic with isolated leads) Capacitance (typ.): CIS ~480 pF, COS ~190 pF, CRS ~14 pF Thermal Resistance: Rθj-mb ≤ 0.8 K/W; Rθmb-hs ≤ 0.2 K/W Operating Temp Range: –65°C to +200°C Compliance: RoHS