STGW80H65DFB 650V 80A IGBT
Regular price
Rs.350.00
Sale price
Rs.370.00
STGW80H65DFB / STGWT80H65DFB IGBT 650 V, 80 A IGBT
The STGW80H65DFB / STGWT80H65DFB IGBTs from STMicroelectronics’ HB series deliver exceptional efficiency, reliability, and high-speed performance for demanding power electronics applications. Featuring a trench-gate field-stop architecture, these devices combine low conduction losses with fast switching, making them ideal for industrial and commercial power conversion systems. Rated at 650 V collector-emitter voltage and 80 A continuous current, they maintain stable operation under extreme thermal conditions with a maximum junction temperature of 175 °C.
These IGBTs are designed to maximize efficiency through a low typical saturation voltage of 1.6 V at 80 A, minimizing conduction losses and heat generation. High-speed switching capability, minimized tail current, and an integrated soft-recovery antiparallel diode further reduce switching losses, supporting cleaner, faster transitions in high-frequency applications. Safe parallel operation is ensured by a positive V₍CE(sat)₎ temperature coefficient and tight parameter distribution, allowing reliable scalability in multi-device configurations.
The versatility of the STGW80H65DFB / STGWT80H65DFB makes it well-suited for photovoltaic inverters, high-frequency converters, motor drives, and UPS systems. Its robust thermal performance and durable design ensure consistent operation even in harsh industrial environments, delivering reliable, high-performance switching for both commercial and industrial power electronics solutions.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector‑Emitter Voltage | V_CES | 650 | V |
| Continuous Collector Current (T_C = 100 °C) | I_C | 80 | A |
| Pulsed Collector Current | I_CP | 300 | A |
| Total Power Dissipation (T_C = 25 °C) | P_TOT | 470 | W |
| Thermal Resistance Junction‑Case | R_thJC | 0.32 | °C/W |
| Gate‑Emitter Threshold Voltage | V_GE(th) | 5–7 | V |
| Typical Saturation Voltage | V_CE(sat) | 1.6 | V |
| Turn‑On Switching Energy | E_on | 4.4 | mJ |
| Turn‑Off Switching Energy | E_off | 2.1 | mJ |
| Maximum Junction Temperature | T_J(max) | 175 | °C |
| Reverse Recovery Time (Diode) | t_rr | 85 | ns |
For more detailed information, please refer to the STMicroelectronics datasheet.
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