80H65 650V 80A IGBT

80H65 IGBT from STMicroelectronics is a high-efficiency 650V, 80A trench gate field-stop power transistor designed for advanced energy systems and industrial electronics. Built for precision, it features a low V\CE\(sat) of just 1.6V to reduce conduction losses, along with a TO-247 package that provides superior heat dissipation and durability under high thermal stress. This power device operates reliably at temperatures up to 175°C, delivering consistent switching performance in motor drives, solar inverters, and uninterruptible power supplies (UPS).

Thanks to its fast recovery and tight parameter distribution, the 80H65 IGBT ensures dependable operation even in complex, high-current circuits. It supports safe parallel operation, making it suitable for scalable systems such as welding equipment, battery chargers, and smart grid infrastructure. With a power dissipation capacity of 469W, this transistor offers both long-term reliability and efficiency in Pakistan’s demanding industrial environments.

Key Specs Type: Trench Field-Stop IGBT Voltage Rating: 650V Current Rating: 80A V\_CE\(sat): 1.6V Package: TO-247 Max Power Dissipation: 469W Switching: High-Speed, Low-Loss Applications: Solar Inverters, UPS Systems, Motor Drives, Battery Chargers, Welding Machines Operating Temp Range: -40°C to +175°C