Toshiba 2SC5353

The Toshiba 2SC5353 is a hard-working Silicon NPN triple-diffused power transistor built for demanding high-voltage switching tasks. Designed primarily for switching regulators and high-speed DC-DC converters, the 2SC5353 combines an exceptionally high collector–emitter breakdown rating (VCEO ≈ 800 V) with fast switching times (rise time tₙ ≤ 0.7 μs, fall time t_f ≤ 0.5 μs), making it a reliable choice where mains-level voltages and rapid switching are required. Its SC-67 style through-hole package (Toshiba 2-10R1A) and typical weight ≈ 1.7 g make it straightforward to fit into retrofit or repair work on older power supplies.

Built for robust performance in industrial and commercial power electronics, the 2SC5353 delivers useful continuous and pulsed currents (IC = 3 A DC, ICP = 5 A pulse) and tolerates high stresses when mounted on an appropriate heatsink (PC(Tc=25°C) = 25 W; PC(Ta=25°C, no heatsink) ≈ 2.0 W). Typical DC current gain ranges and saturation characteristics make it suitable for BJT-preferred designs (for example some legacy SMPS topologies and high-voltage drivers) where designers require predictable turn-off behaviour and tight control of conduction during switching transitions. Key electrical limits such as VCBO = 900 V and VEBO = 7 V give clear guardrails for safe operation in mains-connected circuits.

The device is engineered for durable operation: maximum junction temperature Tj = 150 °C, storage range −55 to +150 °C, and conservative absolute-maximum ratings that guide safe design and derating for long life. Typical applications include switching regulators, high-voltage DC-DC converters, and other power switching roles where the combination of high voltage withstand and relatively fast BJT switching is preferred.

Key specs