2SC2873 50V 2A NPN Bipolar Transistor SOT89

2SC2873 50 V 2 A NPN Bipolar Transistor – SOT‑89 Package (Toshiba)

The 2SC2873 is an NPN epitaxial-planar transistor rated for 50 V collector-emitter voltage and 2 A continuous collector current. Packaged in compact SOT‑89 format, it supports collector power dissipation of up to 500 mW (1 W on ceramic substrates) and a junction temperature of +150 °C.

Key performance metrics include a maximum V_CE(sat) of 0.5 V at 1 A and transition frequency (f_T) of 120 MHz at 0.5 A, enabling fast switching and low losses in amplifier and switching circuits. It features DC current gain (h_FE) between 70–240 depending on bias class and meets moisture sensitivity level 1 with halogen-free construction and RoHS compliance.

Key Specs Voltage Rating: 50 V (V_CEO) Current Rating: 2 A continuous Collector Power Dissipation: 500 mW (1 W on ceramic substrate) Technology: NPN, epitaxial-planar (PCT) Package: SOT‑89 (SC‑62) surface-mount V_CE(sat): ≤ 0.5 V @ 1 A, 50 mA base drive Transition Frequency: 120 MHz @ 0.5 A DC Current Gain (h_FE): 70–240 (IC = 0.5 A) Operating Temp Range: −55 °C to +150 °C Compliance: Halogen-free, RoHS-compliant

Applications include power amplification, switching circuits, audio amplifiers, and general power control in compact surface-mount designs.