Silan SGTQ160V65SDB1APW 650V 160A IGBT
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SGTQ160V65SDB1APW (160V65) Field-Stop IGBT – 650 V / 160 A Power Switch
The SGTQ160V65SDB1APW, often referred to as 160 V65 Field-Stop IGBT, is a premium 650 V, 160 A N‑channel switching transistor. It delivers exceptionally low saturation voltage (~1.42 V at 200 A) and fast switching speeds, offering minimal conduction and switching losses in high-power systems. It operates with maximum junction temperatures up to 175 °C and features a short-circuit withstand time useful for rugged power applications.
This IGBT is paired with an anti-parallel diode and packaged in TO‑247P‑3L or TO‑247PN‑3L form factors. It supports high input impedance and shows excellent current sharing capability in parallel configurations. Its advanced Field-Stop 5 architecture makes it suitable for EV inverters, industrial motor drives, HVAC systems, and renewable energy setups.
Key Specs Voltage Rating: 650 V DC Current Rating: 160 A Continuous; up to 200 A @ 25 °C pulsed Technology: N‑Channel Field‑Stop Trench IGBT + integrated diode Package: TO‑247P‑3L or TO‑247PN‑3L V\CE(sat)\: ~1.42 V typ @ 200 A Gate Charge (Qg): ~750 nC typ Switching Speed: Fast switching, optimized for low EMI Thermal Performance: TJ max = 175 °C Rise Time: ~62 ns typ Applications: EV Powertrains, Motor Drives, Industrial Inverters, PFC, Renewable Systems Brand: Silan (SGTQ series) Compliance: RoHS Compliant
