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Infineon GP4068DPBF 600V 96A IGBT

Regular price Rs.450.00
Sale price Rs.550.00
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Infineon GP4068DPBF 600V 96A IGBT
Infineon GP4068DPBF 600V 96A IGBT
Regular price Rs.450.00
Sale price Rs.550.00

GP4068DPBF

The GP4068DPBF is a 600 V, 96 A insulated-gate bipolar transistor (IGBT) using low-VCE(on) trench technology, designed for high-power switching in industrial and renewable-energy systems. With a typical collector–emitter saturation voltage of 1.65 V at 25 °C and an integrated ultra-soft fast-recovery diode, it offers low conduction and switching losses, reducing thermal stress and improving switching performance. The device is supplied in a TO-247 package for straightforward mounting and efficient thermal management. For detailed electrical curves and handling instructions, see the official datasheet from Infineon.

The maximum junction temperature is 175 °C, and the IGBT supports a short-circuit withstand time of 5 µs. It also provides a reverse bias safe operating area (RBSOA) suitable for circuits with transient spikes or high-voltage switching. Continuous collector current is 96 A at TC = 25 °C (48 A at TC = 100 °C), with pulse and clamped-inductive currents specified for heavy-duty switching applications.

Commonly used in motor drives, solar inverters, UPS systems, induction heating, welding machines, and industrial automation, this IGBT supports systems where efficient, stable switching and thermal reliability are required. For complete technical specifications, thermal data, and safe-operating area graphs, refer to the datasheet from Infineon.

Key Specs

Parameter Value
Transistor type IGBT (Trench technology)
Collector–Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC) @ TC = 25 °C 96 A
Continuous Collector Current (IC) @ TC = 100 °C 48 A
Typical Saturation Voltage VCE(on) 1.65 V (typ., at 25 °C)
Short-circuit withstand time (tSC) ≥ 5 µs
Maximum Junction Temperature (TJmax) 175 °C
Package TO-247
Integrated diode Ultra-soft fast-recovery diode (low VF)
Pulse / Clamped-Inductive Currents ICM ≈ 144 A (pulse, VGE = 15 V); ILM ≈ 192 A (clamped inductive, VGE = 20 V)
Maximum Power Dissipation (PD @ TC = 25 °C) 330 W
Thermal resistance RθJC (IGBT) ~0.45 °C/W
Typical Applications Motor drives, solar inverters, UPS, induction heating, welding, industrial automation

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