IKW75N60T (Marking: K75T60)
The IKW75N60T is a low‑loss DuoPack IGBT from Infineon’s TRENCHSTOP™ & Field‑Stop series, designed for power electronics applications. It features a 600 V collector-emitter voltage and 75 A collector current, with a typical collector‑emitter saturation voltage of 1.5 V. The device supports high-temperature operation up to 175 °C and has a short circuit withstand time of 5 µs. Its fast recovery anti-parallel diode and low switching losses provide stable and reliable performance in industrial and commercial power systems. Infineon Datasheet
The IKW75N60T is suitable for frequency converters, motor drives, and uninterrupted power supplies (UPS). Its low V₍CE(sat)₎ reduces conduction losses, while the fast switching and soft recovery diode minimize switching losses. Tight parameter distribution and temperature-stable behavior ensure consistent performance under varying conditions.
Packaged in PG‑TO247‑3 format, the IKW75N60T provides ease of integration into power modules and systems. It is JEDEC qualified and RoHS compliant. For complete technical details, refer to the Infineon datasheet.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector‑Emitter Voltage (V₍CE₎) | 600 | V |
| DC Collector Current (I₍C₎ @ T₍c₎ = 25 °C) | 75 | A |
| Collector‑Emitter Saturation Voltage (V₍CE(sat)₎, typ. at I₍C₎ = 75 A, V₍GE₎ = 15 V, T₍j₎ = 25 °C) | 1.5 | V |
| Maximum Junction Temperature (T₍j max₎) | 175 | °C |
| Short‑Circuit Withstand Time (t₍SC₎) | 5 | µs |
| Power Dissipation (P₍tot₎ @ T₍C₎ = 25 °C) | 428 | W |
| Thermal Resistance, junction‑to‑case (R₍thJC₎) | 0.35 | K/W |
| Thermal Resistance, junction‑to‑case (diode) (R₍thJCD₎) | 0.6 | K/W |
| Thermal Resistance, junction‑to‑ambient (R₍thJA₎) | 40 | K/W |
For detailed electrical and thermal characteristics, switching behavior, and package information, refer to the Infineon datasheet.
