Toshiba 2SK2611 900V N channel MOSFET

2SK2611

The Toshiba 2SK2611 MOSFET is a high-voltage N-channel transistor designed for applications requiring fast and stable switching performance. With a 900 V drain-source rating and 9 A continuous drain current, it supports DC-DC converters, relay drivers and motor-drive circuits commonly used in industrial and commercial equipment. The device features enhancement-mode operation, controlled leakage characteristics and a through-hole TO-3PN/SC-65 package suited for systems where mechanical stability and heat dissipation are important.

The 2SK2611 provides a typical drain-source ON resistance of 1.1 Ω (1.4 Ω max), a forward transfer admittance of 7.0 S (typical) and consistent switching behaviour, including a 60 ns turn-on and 95 ns turn-off time. These characteristics contribute to predictable conduction losses and controlled switching energy in high-voltage designs. Input, output and reverse capacitance values are documented to support accurate modelling in converter and motor-control environments.

Thermal data include a 150 W dissipation rating at Tc = 25 °C and a channel-to-case thermal resistance of 0.833 °C/W (max). The device also includes a diode with −1.9 V forward voltage at rated current and defined avalanche energy ratings for protection-aware circuits. These specifications support integration into designs where defined thermal paths and voltage stress management are required.

Key Specs