Semikron SK60GB123 IGBT Module
The Semikron SK60GB123 is a reliable and high-performance IGBT module engineered for demanding power electronics applications. With a collector-emitter voltage of 1200V and a continuous collector current of up to 60A at 25°C, this Semikron module delivers excellent switching performance and power handling capability. It is widely used in inverters, motor drives, uninterruptible power supplies (UPS), switched-mode power supplies (SMPS), and renewable energy systems. Thanks to its robust design and high short-circuit withstand capability, the Semikron SK60GB123 ensures stable and dependable operation even under challenging industrial conditions.
One of the key advantages of the Semikron SK60GB123 is its superior efficiency, achieved through low saturation voltage and fast switching characteristics that minimize energy losses and improve overall system performance. Built with advanced direct copper bonded (DCB) aluminum oxide ceramic, it offers excellent thermal conductivity and electrical isolation, allowing reliable operation at junction temperatures up to 150°C. This makes the Semikron SK60GB123 an ideal choice for industrial and commercial applications where long-term durability, reduced maintenance, and high efficiency are essential, such as factory automation equipment, commercial inverters, and solar power converters.
The Semikron SK60GB123 also features an integrated inverse diode with low forward voltage (typically 1.8V at high currents), enabling smooth freewheeling operation in switching circuits. Its positive temperature coefficient for V_CE(sat) helps prevent thermal runaway, adding an extra layer of safety and reliability. Engineers and system designers choose this Semikron IGBT module for its proven balance of power density, thermal performance, and long-term stability in mission-critical applications.
Key Specs
| Parameter |
Value |
| Brand |
Semikron |
| Collector-Emitter Voltage (V_CES) |
1200 V |
| Continuous Collector Current (I_C) at 25°C |
60 A |
| Continuous Collector Current (I_C) at 80°C |
40 A |
| Collector-Emitter Saturation Voltage (V_CE(sat)) at 50A, 125°C |
3.1 V (typical) |
| Gate-Emitter Threshold Voltage (V_GE(th)) |
5.5 V (typical) |
| Diode Forward Voltage (V_F) at 50A, 125°C |
1.8 V (typical) |
| Isolation Voltage (V_isol) |
2500 V |
| Operating Junction Temperature (T_j) |
-40 to +150 °C |
| Package |
SEMITOP 3 |
For more detailed information, please refer to the Semikron datasheet. Semikron SK60GB123 Datasheet