IRF2807 N-Channel Power MOSFET is a 75V, 82A high-performance transistor designed for fast switching and low conduction loss in industrial and automotive power systems. With an ultra-low RDS(on) of just 13mΩ (typical), the IRF2807 ensures energy-efficient performance, reduced heat generation, and high-speed switching for demanding power applications.
This HEXFET MOSFET, housed in a TO-220 package, provides excellent thermal conductivity and robust mechanical reliability. It is widely used in motor drives, power amplifiers, DC-DC converters, and battery-powered systems. Supporting a wide operating temperature range from -55°C to +175°C, the IRF2807 handles high current loads in electric vehicles, renewable energy inverters, and heavy-duty industrial equipment with reliability and ease.
With a total gate charge (Qg) of 140nC and fast switching times, this device is ideal for applications requiring precise control and minimal delay. Engineers prefer the IRF2807 for its high avalanche energy capability and proven performance in high-efficiency, compact power solutions.
Key Specs Type: N-Channel HEXFET Power MOSFET Drain-Source Voltage (V\DSS\): 75V Continuous Drain Current (I\D\): 82A @ 25°C On-Resistance (R\DS(on)\): 13mΩ (typical) Gate Charge (Q\g\): 140nC Gate Threshold Voltage (V\GS(th)\): 2.0V – 4.0V Package: TO-220AB Operating Temp Range: -55°C to +175°C Switching Times: Turn-on Delay: ~20ns, Turn-off Delay: ~60ns Applications: DC-DC Converters, Motor Control Systems, Power Amplifiers, Automotive Power Management, Renewable Energy Inverters, Battery Management Systems
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