HY3215 MOSFET is a high-performance 150V, 120A N-channel enhancement mode transistor designed for demanding power applications. The HY3215 MOSFET features a low RDS(on) of 12mΩ (typical), allowing efficient switching with reduced heat generation and power loss. Its TO-247 package offers excellent thermal management, and it's also available in TO-220FB, TO-263, and TO-3PS versions for flexible integration in power circuits.
With a high total gate charge of 137nC and fast switching times (turn-on delay: 26ns, turn-off delay: 77ns), the HY3215 MOSFET ensures reliable performance in high-frequency designs. It operates across a wide junction temperature range from -55°C to +175°C, making it suitable for automotive electronics, inverters, solar power systems, and DC-DC converters.
Key Specs Type: N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage (V\DSS\): 150V Continuous Drain Current (I\D\): 120A @ 25°C (84A @ 100°C) Drain-Source On-State Resistance (R\DS(on)\): 12mΩ (typ.) Gate Threshold Voltage (V\GS(th)\): 3.0V – 5.0V Gate-Source Voltage: ±25V Package: TO-247 (also available in TO-220FB, TO-263, TO-3PS options) Total Gate Charge (Q\g\): 137nC Thermal Resistance (Junction-to-Case): 0.5°C/W Operating Junction Temp: -55°C to +175°C Switching Times: Turn-on Delay: 26ns, Turn-off Delay: 77ns, Rise Time: 58ns, Fall Time: 58ns Applications: DC-DC Converters, Motor Drives, Inverter Power Management, Automotive Electronics, UPS & Backup Systems, Renewable Energy Systems (e.g., solar, wind)
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