Toshiba MP6752 600V 20A IGBT Module
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Toshiba MP6752 600V 20A IGBT Module
MP6752: High-Performance IGBT Module for Power Electronics
The Toshiba MP6752 is an Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power electronics applications. Housed in a compact ZIP-11 package, this module integrates six N-channel IGBTs into a single unit, providing a reliable solution for high-power switching and motor control systems. With a collector-emitter voltage rating of 600V and a maximum collector current of 20A, the MP6752 delivers stable performance in industrial and commercial environments.
The MP6752 features a low collector-emitter saturation voltage (VCE(sat)) of up to 4.0V at 20A, reducing power loss during operation. Its high-speed switching capabilities, with a fall time (tf) of 0.35µs and a reverse recovery time (trr) of 0.15µs at 20A, allow rapid response in dynamic applications. The module's thermal resistance values—2.08°C/W for the transistor and 3.09°C/W for the diode—support efficient heat dissipation, contributing to its durability.
The MP6752 is suitable for high-power switching and motor control systems, including industrial drives, uninterruptible power supplies (UPS), and renewable energy inverters. Its isolated electrodes from the case enhance safety and operational reliability. With a junction temperature rating of up to 150°C and RoHS compliance, the MP6752 provides consistent performance for engineers and system designers working in power electronics.
Key Specifications
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 600 V |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Collector Current (IC) | 20 A (DC) |
| Peak Collector Current (ICP) | 40 A (1ms) |
| Forward Current (IF) | 20 A (DC) |
| Peak Forward Current (IFM) | 40 A (1ms) |
| Collector Power Dissipation (PC) | 60 W |
| Junction Temperature (Tj) | 150°C |
| Storage Temperature Range (Tstg) | -40°C to 125°C |
| Isolation Voltage (VIsol) | 2500 V (AC, 1 minute) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 4.0 V (max at IC = 20A) |
| Gate-Emitter Cut-off Voltage (VGE(off)) | 3.0 V to 6.0 V (at IC = 20mA, VCE = 5V) |
| Input Capacitance (Cies) | 1300 pF (at VCE = 10V, VGE = 0, f = 1MHz) |
| Switching Times (at IC = 20A) | Rise Time (tr): 0.3 µs (max) |
| Turn-on Time (ton): 0.4 µs (max) | |
| Fall Time (tf): 0.2 µs (max) | |
| Turn-off Time (toff): 0.5 µs (max) | |
| Forward Voltage (VF) | 1.7 V to 2.5 V (at IF = 20A, VGE = 0) |
| Reverse Recovery Time (trr) | 0.08 µs to 0.15 µs (at IF = 20A, VGE = -10V, di/dt = 50A/µs) |
| Thermal Resistance (Rth(j-c)) | 2.08°C/W (Transistor) |
| 3.09°C/W (Diode) |
For more detailed information, please refer to the Toshiba MP6752 datasheet.
