STGW40H120DF2 1200V 40A High Speed IGBT

STGW40H120DF2 IGBT

The STGW40H120DF2 IGBT, a high-performance component from STMicroelectronics’ H series, is designed for demanding power electronics applications. With a 1200V rating and 40A current capacity, it delivers an optimal balance of low conduction and switching losses, ideal for high-frequency converters, photovoltaic inverters, and industrial automation systems. Its trench gate field-stop technology and fast-recovery antiparallel diode enhance efficiency, while a maximum junction temperature of 175°C ensures robust thermal performance in harsh environments.

Key Performance Features

This component provides high-speed switching with minimized tail current, reducing energy losses in high-frequency operations. Its collector-emitter saturation voltage of 2.1V at 40A ensures low conduction losses, and the fast-recovery diode supports applications where diode performance is critical. Housed in a reliable TO-247 package, the STGW40H120DF2 IGBT offers ease of mounting and excellent thermal management for consistent performance.

Applications in Industry

This semiconductor excels in uninterruptible power supplies, welding equipment, and power factor correction circuits. Its high efficiency and reliability make it a top choice for renewable energy systems, such as solar and wind inverters, and motor drives in industrial and automotive sectors.

Why Choose This Power Component?

Engineers and procurement teams trust the STGW40H120DF2 IGBT for its superior performance and durability in power-critical applications. Its advanced technology and robust design ensure long-term reliability, making it a cost-effective solution for scalable, high-efficiency systems. Order now for premium semiconductors with competitive bulk pricing.