SKIIP22NAB125T12 IGBT Module
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SKIIP22NAB125T12 IGBT Module
SKIIP22NAB125T12 IGBT Module
The SEMIKRON SKIIP22NAB125T12 is an IGBT (Insulated Gate Bipolar Transistor) module designed for power electronic applications. This module combines a 3-phase bridge rectifier, brake chopper, and 3-phase bridge inverter, providing a compact solution for efficient power conversion. With a maximum collector-emitter voltage (V_CES) of 1200 V and a maximum collector current (I_C) of 225 A, it supports stable operation in industrial and commercial systems.
The module features low conduction and switching losses, which improves energy efficiency and reduces thermal stress. Its robust construction ensures consistent performance under varying operating conditions, making it suitable for motor drives, uninterruptible power supplies (UPS), renewable energy systems, and HVAC applications. The compact M2 package allows for space-efficient integration into power electronics setups.
With advanced thermal management and optimized switching performance, the SKIIP22NAB125T12 maintains reliability and long operational life. Its design supports a wide range of industrial applications where consistent energy conversion and system stability are critical.
Key Specifications
| Feature | Specification |
|---|---|
| Maximum V_CES | 1200 V |
| Maximum I_C | 225 A |
| Configuration | 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter |
| Package Type | M2 |
| Operating Temperature Range | -40°C to +150°C |
| Mounting Type | Press-fit |
| Weight | ~0.5 kg |
For more detailed information, refer to the SEMIKRON datasheet: SKIIP22NAB125T12 Datasheet
