SEMIKRON SKM200GB123D 1200V 200A IGBT Module
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SEMIKRON SKM200GB123D 1200V 200A IGBT Module
SKM200GB123D
The SKM200GB123D is a high-performance IGBT half-bridge module engineered for demanding industrial and commercial power-electronics applications. Combining a 1200 V collector-emitter rating with a continuous collector current capability up to 200 A (Tcase = 25 °C), this module delivers the robust switching performance and thermal headroom designers need for inverters, motor drives, UPS systems, and welding or traction equipment. Built on SEMITRANS technology with a low-inductance case and MOS-input gate, the SKM200GB123D gives fast, predictable switching and high short-circuit tolerance while remaining compact and easy to integrate.
Beyond raw ratings, the SKM200GB123D is designed for efficiency and reliability in continuous industrial operation. Its isolated copper baseplate and low thermal resistance (Rth, case ≈ 0.038 °C/W per module) help keep junction temperatures in check under heavy loads, while the module’s fast soft inverse diodes and low tail current characteristics reduce switching losses and electromagnetic stress in real systems. With an isolation test voltage of 2500 VAC and wide operating junction range, this module is suitable for harsh factory environments and long duty-cycle operation where durability and predictable thermal behavior are critical.
For system designers the benefits are straightforward: higher efficiency from lower switching and conduction losses, increased system reliability from proven thermal management and protection margins, and simplified assembly thanks to standardized mechanical and electrical interfaces. Typical application areas include three-phase inverter stacks for industrial motor drives, battery and grid-tie inverters, and heavy-duty UPS and traction power modules where high blocking voltage (1200 V) and high steady-state current (200 A) are required. The SKM200GB123D strikes a pragmatic balance between performance, durability, and cost for commercial and industrial power-electronics projects.
Key Specs
| Parameter | Value |
|---|---|
| Part number | SKM200GB123D |
| Collector-Emitter voltage (VCES) | 1200 V. |
| Nominal continuous collector current (IC) | 200 A (Tcase = 25 °C). |
| Pulse / peak currents (ICM) | 400 A (1 ms, Tcase = 25/80 °C). |
| Freewheeling diode peak current (IFSM) | up to 1800 A (10 ms, sin., Tj = 150 °C) depending on variant. |
| Total power dissipation per IGBT (Ptot) | ≈ 1380 W (Tcase = 25 °C). |
| Gate-Emitter voltage (VGES) | ±20 V (absolute max). |
| Thermal resistance (Rth, case) | ≈ 0.038 °C/W per module. |
| Isolation voltage (Visol) | 2500 VAC (1 min). |
| Operating junction temperature (Tj) | -40 … +150 °C (storage and operating ranges in datasheet). |
| Package / weight | SEMITRANS module, approx. 325 g. |
For more detailed information, please refer to the SEMIKRON datasheet (official technical datasheet and full electrical/thermal graphs): https://www.farnell.com/datasheets/12207.pdf.
