SKM150GAL12T4

The SKM150GAL12T4 is an IGBT half-bridge module designed for power-electronics systems that require high voltage and sustained current. It combines a 1,200 V blocking voltage with a nominal 150 A collector current and supports up to 232 A continuous collector current at a case temperature (Tc) of 25 °C. It uses 4th-generation trench IGBT technology and a CAL4 soft-switching diode to reduce switching stress and improve switching behavior. (Data from official datasheet.)

This module shows low collector-emitter saturation voltage (typical ≈ 1.8 V at IC = 150 A, VGE = 15 V), integrated gate resistance, and a direct-bonded copper (DBC) baseplate for improved thermal conduction and mechanical stability. The switching energy values (Eon ≈ 19.2 mJ, Eoff ≈ 15.8 mJ at Tj = 150 °C) allow operation at moderate switching frequencies (up to about 20 kHz depending on application). It also features high short-circuit withstand and validated thermal impedance performance.

In industrial and commercial environments, the SKM150GAL12T4 is used in DC/DC converters, motor drive inverters, brake choppers, and electronic welding machines. It is rated for maximum case temperature of 125 °C, has 4,000 VAC isolation (1 minute test), and is UL recognized. For full details on pin-out, mounting, and thermal curves, the official datasheet should be consulted.

Key specs

For more detailed information, please refer to the Semikron datasheet