Home Semikron SKM100GB12T4 1200V 100A IGBT Module

Semikron SKM100GB12T4 1200V 100A IGBT Module

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Semikron SKM100GB12T4 1200V 100A IGBT Module

Semikron SKM100GB12T4 1200V 100A IGBT Module

Rs.0.00

SKM100GB12T4 IGBT Module

The SKM100GB12T4 is a high-performance IGBT module from SEMIKRON's SEMITRANS® 2 series, engineered to meet the demanding requirements of industrial and commercial power electronics applications. Utilizing the fourth-generation IGBT4 trench technology, this module offers superior switching characteristics and efficiency, making it ideal for high-frequency operations up to 20 kHz. Its robust design ensures reliable performance in applications such as AC inverter drives, uninterruptible power supplies (UPS), and electronic welding systems.

Built with an insulated copper baseplate using Direct Bonded Copper (DBC) technology, the SKM100GB12T4 provides enhanced thermal management and increased power cycling capability. The integrated gate resistor and soft-switching CAL4 diode further contribute to its efficiency and durability. With a maximum junction temperature of 175°C and a collector-emitter voltage rating of 1200V, this module is designed to operate under harsh conditions, ensuring long-term reliability in demanding environments.

In summary, the SKM100GB12T4 IGBT module offers a combination of high efficiency, durability, and versatility, making it a preferred choice for industrial and commercial power electronics applications. Its advanced features and robust design ensure optimal performance and longevity, even in challenging operational conditions.

Key Specifications

Feature Specification
Module Type SEMITRANS® 2
IGBT Technology IGBT4 (Trench)
Collector-Emitter Voltage 1200 V
Nominal Collector Current 100 A
Continuous Collector Current 160 A (at Tc = 25°C)
Collector-Emitter Saturation Voltage 1.8 V (at Tj = 25°C)
Gate-Emitter Threshold Voltage 5.0 – 6.5 V
Gate Charge (Qg) 565 nC
Turn-On Energy (Eon) 15 mJ
Turn-Off Energy (Eoff) 10.2 mJ
Reverse Recovery Charge (Qrr) 15.7 µC
Thermal Resistance (junction-to-case per IGBT) 0.27 K/W
Operating Temperature Range -40°C to +150°C
Maximum Junction Temperature 175°C
Package Dimensions (L×W×H) 94 × 34 × 30 mm
Weight 160 g


For more detailed information, please refer to the Semikron datasheet.

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