SEMIKRON SEMiX453GB12E4p 1200V 450A IGBT Module
Guarantee Safe Checkout
SEMIKRON SEMiX453GB12E4p 1200V 450A IGBT Module
SEMiX453GB12E4p — SEMIKRON SEMiX 3p Trench IGBT Module
The SEMiX453GB12E4p is a high-power SEMIKRON SEMiX 3p trench IGBT module engineered for demanding industrial and commercial power-electronics applications. It is rated for 1200 V collector-emitter voltage and a 450 A nominal collector current, making it well suited for three-phase inverter drives, UPS systems and renewable-energy converters where high voltage and high current handling are mandatory.
Designed to deliver efficient switching and low conduction losses, the module uses Trench IGBT (IGBT4) chip technology with a typical VCE(sat) in the 1.80–2.05 V range (IC = 450 A, VGE = 15 V) and a low on-resistance (rCE ≈ 2.2–2.6 mΩ at 25 °C), which together reduce power dissipation under heavy load and improve system efficiency. The SEMiX453GB12E4p also features excellent thermal management characteristics — Rth(j-c) per IGBT ≈ 0.066 K/W and Rth(c-s) down to 0.021 K/W with pre-applied phase-change material — supporting higher power density and reliable operation under elevated junction temperatures.
Robustness and serviceability are central to this module’s design: it offers high short-circuit capability, an RMS module current rating of 600 A, surge and reverse-current handling (IFSM ≈ 2430 A, ICRM = 1350 A) and an isolation withstand of 4 kVAC (1 min), making it durable in industrial environments. The package is compact (150 × 62 × 17 mm) and UL recognized (file E63532), simplifying integration into commercial power stacks and ensuring the mechanical and safety attributes required by system designers.
Key Specs
| Parameter | Value |
|---|---|
| Part number | SEMiX453GB12E4p |
| Product family / housing | SEMiX 3p (Trench IGBT module) |
| Chip technology | IGBT 4 (Trench) |
| Collector-emitter voltage (VCES) | 1200 V |
| Nominal collector current (ICnom) | 450 A |
| RMS module current (It(RMS)) | 600 A |
| IGBT surge current (ICRM) | 1350 A (ICRM = 3 × ICnom) |
| Diode surge current (IFSM) | 2430 A (tp = 10 ms, sin 180°) |
| Typical VCE(sat) | 1.80 – 2.05 V (IC = 450 A, VGE = 15 V, Tj = 25 °C) |
| On-resistance (rCE) | ≈ 2.2 – 2.6 mΩ (Tj = 25 °C) |
| Gate charge (QG) | 2550 nC |
| Thermal resistance Rth(j-c) per IGBT | 0.066 K/W |
| Thermal resistance Rth(c-s) per IGBT (grease) | 0.03 K/W; with pre-applied PCM 0.021 K/W |
| Isolation (Visol) | 4 kVAC, 1 min |
| Operating junction temperature (Tj) | -40 … 175 °C |
| Dimensions (L × W × H) | 150 × 62 × 17 mm |
| Weight | ≈ 350 g |
| Typical applications | AC inverter drives, UPS, renewable energy systems |
| Safety recognition | UL recognized, file no. E63532 |
Source: SEMIKRON product datasheet (technical specifications above extracted directly from the SEMiX453GB12E4p datasheet).
For more detailed electrical curves, absolute-maximum ratings, pinout and application notes, please refer to the official SEMIKRON datasheet (PDF): SEMiX453GB12E4p datasheet (PDF).
