SEMiX453GB12E4p — SEMIKRON SEMiX 3p Trench IGBT Module

The SEMiX453GB12E4p is a high-power SEMIKRON SEMiX 3p trench IGBT module engineered for demanding industrial and commercial power-electronics applications. It is rated for 1200 V collector-emitter voltage and a 450 A nominal collector current, making it well suited for three-phase inverter drives, UPS systems and renewable-energy converters where high voltage and high current handling are mandatory.

Designed to deliver efficient switching and low conduction losses, the module uses Trench IGBT (IGBT4) chip technology with a typical VCE(sat) in the 1.80–2.05 V range (IC = 450 A, VGE = 15 V) and a low on-resistance (rCE ≈ 2.2–2.6 mΩ at 25 °C), which together reduce power dissipation under heavy load and improve system efficiency. The SEMiX453GB12E4p also features excellent thermal management characteristics — Rth(j-c) per IGBT ≈ 0.066 K/W and Rth(c-s) down to 0.021 K/W with pre-applied phase-change material — supporting higher power density and reliable operation under elevated junction temperatures.

Robustness and serviceability are central to this module’s design: it offers high short-circuit capability, an RMS module current rating of 600 A, surge and reverse-current handling (IFSM ≈ 2430 A, ICRM = 1350 A) and an isolation withstand of 4 kVAC (1 min), making it durable in industrial environments. The package is compact (150 × 62 × 17 mm) and UL recognized (file E63532), simplifying integration into commercial power stacks and ensuring the mechanical and safety attributes required by system designers.

Key Specs

Source: SEMIKRON product datasheet (technical specifications above extracted directly from the SEMiX453GB12E4p datasheet). 

For more detailed electrical curves, absolute-maximum ratings, pinout and application notes, please refer to the official SEMIKRON datasheet (PDF): SEMiX453GB12E4p datasheet (PDF).