NXH80T120L2Q0S2G IGBT Power Module
The ON Semiconductor NXH80T120L2Q0S2G is an IGBT power module designed for industrial and commercial power electronics applications. With a collector-emitter voltage rating of 1200 V and a maximum collector current of 67 A, this module provides reliable switching performance in various power conversion systems. Its compact Q0PACK-20 package supports efficient thermal management and system integration.
The module incorporates field-stop trench IGBTs and fast recovery diodes, which result in low saturation voltage and reduced switching losses. These characteristics improve energy efficiency and support consistent operation under varying load conditions. The design enables stable performance across a range of temperatures and operating conditions.
This IGBT module can be used in applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems. Its electrical specifications and package type make it compatible with standard industrial power systems.
For more detailed information, please refer to the ON Semiconductor datasheet: NXH80T120L2Q0S2G Datasheet.
Key Specifications
| Parameter | Value |
|---|---|
| Maximum Collector-Emitter Voltage | 1200 V |
| Maximum Collector Current | 67 A |
| Maximum Power Dissipation | 158 W |
| Saturation Voltage (Vce(on)) | 2.05 V @ 15 V, 80 A |
| Gate-Emitter Leakage Current | 300 nA |
| Operating Temperature Range | -40°C to +150°C |
| Package Type | Q0PACK-20 |
| Mounting Type | Screw |
| Thermistor | Integrated |
| Application Areas | Solar Inverters, UPS, Energy Storage Systems |
