NCE80TD65 650V 80A IGBT TO-247

NCE80TD65 IGBT – 650V 80A Trench FS II IGBT in TO-247 Package

NCE80TD65 IGBT is a high-performance 650V, 80A insulated gate bipolar transistor developed with advanced Trench FS II technology to deliver fast switching, low conduction losses, and high energy efficiency. Designed for demanding industrial environments, this IGBT supports reliable power handling in applications such as motor drives, solar inverters, UPS systems, and induction heating.

Encased in a durable TO-247 package, the NCE80TD65 offers excellent thermal conductivity and high power density. Its optimized gate structure ensures smooth switching transitions, reducing electromagnetic interference (EMI) and thermal stress. The IGBT supports parallel operation, enabling scalable integration in large power modules and high-capacity energy systems.

With features like low VCE(sat), minimal turn-off tail current, and reduced switching losses, the NCE80TD65 enhances system efficiency and lowers overall power consumption. This makes it a trusted solution for engineers working in renewable energy, automation, and industrial power electronics.

Key Specs Model: NCE80TD65 Voltage Rating: 650V Current Rating: 80A Technology: Trench FS II IGBT Package: TO-247 Features: Fast Switching, Low Conduction Loss, Low VCE(sat), Parallel Support Applications: Solar Inverters, Motor Drives, UPS, Induction Heating, Power Conversion Thermal Performance: High Power Density, EMI Reduction Mounting: Through-Hole Brand: NCE Power