Mitsubishi RM25TN-2H Diode Module
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Mitsubishi RM25TN-2H Diode Module
RM25TN-2H — Mitsubishi Three-Phase Diode Bridge Module
The RM25TN-2H is a rugged three-phase diode bridge module engineered for reliable AC→DC rectification in industrial power electronics. Designed for motor drives, inverters and UPS systems, it combines isolated mounting and a metal baseplate with low thermal impedance to help systems run cooler and more stably under continuous load. The module’s electrical rating (repetitive peak reverse voltage 1600 V) and DC output capability make it suitable for medium-power three-phase rectification tasks in harsh industrial environments.
In service the RM25TN-2H delivers dependable performance: it is specified for a DC output current of 25 A (Tb = 100 °C) with a surge (non-repetitive) forward current peak of 400 A (one half cycle at 60 Hz), and the typical forward voltage drop is about 1.5 V measured at IFM = 25 A. Thermal management is straightforward thanks to a low junction-to-base thermal resistance of 2.0 °C/W and a base-to-fin thermal resistance (with thermal grease) of 0.3 °C/W; the package also meets an isolation rating of 2500 Vrms (terminal to baseplate). These ratings help the RM25TN-2H withstand inrush events and continuous operation over wide temperature ranges (Tj: −40 to +125 °C).
For equipment designers the RM25TN-2H offers clear benefits: efficient rectification (low forward drop and low thermal impedance) that reduces heatsink size and system losses, durable metal base-plate construction for long life in industrial installations, and simple mechanical mounting with defined torque limits for reliable installation. Its recommended AC input voltage and thermal curves make it straightforward to size in motor controls, variable-frequency drives and uninterruptible power supplies where dependable three-phase rectification is required. For exact design, mounting and thermal-derating guidance please consult the official Mitsubishi Electric Semiconductor datasheet linked below.
Key specifications (from Mitsubishi Electric Semiconductor datasheet)
| Parameter | Value |
|---|---|
| Manufacturer | Mitsubishi Electric Semiconductor |
| Part number | RM25TN-2H |
| Device type | Three-phase diode bridge module |
| Repetitive peak reverse voltage (VRRM) | 1600 V |
| Non-repetitive peak reverse voltage (VRSM) | 1700 V |
| Recommended AC input voltage (EA) | 440 V |
| DC output current (Io), Tb = 100 °C | 25 A |
| Surge (non-repetitive) forward current IFSM (one half cycle, 60 Hz) | 400 A (peak) |
| Forward voltage drop VFM (IFM = 25 A) | ~1.5 V |
| Thermal resistance, junction-to-base Rth(j-b) | 2.0 °C/W |
| Thermal resistance, base-to-fin Rth(b-f) (with thermal grease) | 0.3 °C/W |
| Isolation voltage (main terminal to baseplate, 1 min AC) | 2500 Vrms |
| Junction / storage temp range (Tj / Tstg) | −40 to +125 °C |
| Mounting/terminal screw torque (M3.5) | 0.78 – 0.98 N·m |
| Typical applications | Motor control, inverters, UPS |
Source / full datasheet (recommended): Mitsubishi Electric Semiconductor — RM25TN-2H datasheet (PDF) — Download RM25TN-2H datasheet (PDF).
