Mitsubishi QM150DY-2HBK 150A 1000V Transistor Module
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Mitsubishi QM150DY-2HBK 150A 1000V Transistor Module
QM150DY-2HBK — High-Power Transistor Module (SEO-Optimized Product Description)
The QM150DY-2HBK from Mitsubishi Electric is a high-power, insulated transistor module engineered for demanding power-electronics applications. Rated for a continuous collector current of 150 A and a collector-emitter voltage capability up to 1000 V, this module delivers the heavy-duty switching performance required by industrial inverters, UPS/CVCF systems, DC motor drives and welding equipment. Its robust thermal and isolation ratings make it ideal where reliability under sustained load and electrical safety are essential.
Built for efficiency and long service life, the QM150DY-2HBK combines strong DC current gain (hFE ≈ 750) with controlled saturation and switching characteristics that simplify gate drive design and improve overall system efficiency. The module’s insulated package, high isolation voltage and wide junction temperature range allow designers to integrate it into compact power stacks while keeping heat management predictable and installation safe. These attributes translate into lower system losses, fewer maintenance cycles, and greater uptime for industrial equipment.
For engineers specifying modules for medium-to-high power conversion, the QM150DY-2HBK represents a practical balance of performance and durability: high collector dissipation capability, conservative surge ratings, and proven application pedigree in AC motor controllers, servo and NC equipment, UPS and DC drives. The module’s electrical and mechanical data make it straightforward to build reliable boards and heat-sink arrangements that meet production scale and field reliability targets.
Key Specs
| Specification | Value |
|---|---|
| Manufacturer | Mitsubishi Electric |
| Part number | QM150DY-2HBK |
| Device type | Insulated high-power transistor module |
| Continuous collector current (IC) | 150 A |
| Collector-emitter voltage (VCEX / VCES) | 1000 V |
| DC current gain (hFE, typ. or min.) | ≈ 750 |
| Collector dissipation (PC) | 1000 W (case, rating) |
| Collector-emitter saturation voltage (VCE(sat), max) | 4.0 V (typ./max per datasheet conditions) |
| Isolation voltage (Viso) | 2500 V AC (1 minute) |
| Junction temperature (Tj) | −40 to +150 °C (operating max) |
| Storage temperature (Tstg) | −40 to +125 °C |
| Surge / peak ratings | Specified surge limits for one-cycle half-wave (see datasheet) |
| Package / mounting | Insulated module — main M6 terminal mounting (see outline drawing) |
| Typical weight | ~470 g |
| Datasheet document date | Feb. 1999 (module family datasheet) |
For more detailed information, pin-outs, absolute maximum ratings and full electrical/thermal tables, please refer to the Mitsubishi Electric datasheet: QM150DY-2HBK Datasheet (Mitsubishi Electric) — PDF.
