K3878 2SK3878 900V 9A N Channel MOSFET
Regular price
Rs.250.00
Sale price
Rs.280.00
K3878 (2SK3878)
The K3878 is a high-voltage N‑channel power MOSFET from Toshiba, designed for reliable performance in power-electronics systems. With a drain‑source voltage of 900 V and a continuous current rating of 9 A, the K3878 is suitable for switch-mode power supplies, industrial converters, motor drives, and uninterruptible power supplies (UPS). Its TO‑3P package provides efficient thermal management and mechanical stability, ensuring consistent operation under elevated temperatures and transient conditions.
This MOSFET features a typical on-resistance (R_DS(on)) of 1.0 Ω (V_GS = 10 V), reducing conduction losses, while its forward transfer admittance (≈ 7.0 S typ.) supports smooth current flow. The gate charge is approximately 60 nC, enabling fast switching and efficient operation in high-frequency designs. Low leakage current (IDSS ≤ 100 µA) allows for both pulsed and continuous operation.
The K3878 is rated for a maximum junction temperature of 150 °C and offers dv/dt tolerance for voltage transients. It has a single-pulse avalanche energy rating of 778 mJ, providing protection against energy spikes during switching. These characteristics make it suitable for long-term use in industrial and commercial power systems.
Key Specifications
| Parameter | Symbol | Value / Range | Unit |
|---|---|---|---|
| Type | – | N‑Channel MOSFET | – |
| Drain‑Source Voltage | V_DSS | 900 | V |
| Continuous Drain Current | I_D | 9 | A |
| On-State Resistance (typical) | R_DS(on) | 1.0 | Ω (V_GS = 10 V) |
| Gate Charge (total) | Q_g | 60 | nC |
| Threshold Voltage | V_th | 2.0 to 4.0 | V |
| Forward Transfer Admittance | ~7.0 | S | |
| Leakage Current (IDSS) | I_DSS | ≤100 | µA (V_DS = 720 V) |
| Package | – | TO‑3P | – |
| Power Dissipation (TC = 25 °C) | P_D | 150 | W |
| Single-Pulse Avalanche Energy | E_AS | 778 | mJ |
| Operating Junction Temperature | T_j | –55 to 150 | °C |
| Gate‑Source Voltage | V_GSS | ±30 | V |
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