Home K3878 900V 9A Silicon N-Channel MOSFET
K3878 transistor component with three metal leads
Toshiba K3878 electronic transistor component with three metal leads
K3878 Thinki 900V N Channel Planar Stripe Power MOSFETs datasheet with electrical ratings and thermal characteristics
Technical data sheet with electrical characteristic graphs for K3878 semiconductor component by The Component Centre
K3878 transistor performance graphs showing characteristics
Technical datasheet page for Thinki Semiconductor product K3878 showing performance graphs and test circuit diagrams
Technical drawing showing package dimensions for Thinki K3878 TO-3PN-SQ TO-3PB-SQ semiconductor component
Technical datasheet for K3878 transistor showing electrical characteristics and source-drain ratings
K3878 transistor component with three metal leads
Toshiba K3878 electronic transistor component with three metal leads
K3878 Thinki 900V N Channel Planar Stripe Power MOSFETs datasheet with electrical ratings and thermal characteristics
Technical data sheet with electrical characteristic graphs for K3878 semiconductor component by The Component Centre
K3878 transistor performance graphs showing characteristics
Technical datasheet page for Thinki Semiconductor product K3878 showing performance graphs and test circuit diagrams
Technical drawing showing package dimensions for Thinki K3878 TO-3PN-SQ TO-3PB-SQ semiconductor component
Technical datasheet for K3878 transistor showing electrical characteristics and source-drain ratings

K3878 900V 9A Silicon N-Channel MOSFET

Regular price Rs.280.00 Sale price Rs.250.00
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K3878 transistor component with three metal leads

K3878 900V 9A Silicon N-Channel MOSFET

Rs.250.00

K3878 MOSFET 900V 9A – High Voltage N-Channel Transistor for Power Electronics

The K3878 MOSFET 900V 9A is a silicon-based N-channel power transistor developed by Toshiba for high-voltage and high-current switching applications. With a drain-source voltage of 900V and a continuous drain current of 9A, this component supports efficient operation in power supplies, converters, and industrial control systems.

Engineered for performance, the K3878 features a low on-resistance of 1.0Ω (typ.) and a high forward transfer admittance of 7.0 S (typ.), enabling minimal conduction losses and smooth current flow. Its low gate charge (60nC typ.) and fast switching response make it suitable for high-frequency designs where space, speed, and thermal efficiency matter.

The TO-3P package offers excellent thermal conductivity and mechanical stability. With a maximum operating temperature of 150°C and a robust silicon dioxide gate oxide structure, this MOSFET ensures long-term durability in harsh industrial conditions. It supports dv/dt resilience and low leakage current, enhancing system reliability against voltage transients.

Key Specs Type: N-Channel MOSFET Drain-Source Voltage: 900V Continuous Drain Current: 9A Gate Charge: 60nC (typical) On-Resistance: 1.0Ω (typical) Package: TO-3P Max Operating Temp: 150°C Applications: SMPS, Converters, Motor Control, UPS, Telecom Systems

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