K3878 900V 9A Silicon N-Channel MOSFET

K3878 900V 9A Silicon N-Channel MOSFET

K3878 900V 9A Silicon N-Channel MOSFET is a cutting-edge semiconductor designed for high-voltage, high-current applications. Engineered by Toshiba, this MOSFET boasts a 900V breakdown voltage and a 9A continuous drain current, making it ideal for power electronics in demanding environments. Its low on-resistance of 1.0Ω (typical) and high forward transfer admittance of 7.0 S (typical) ensure minimal power loss and efficient operation, perfect for engineers seeking reliable performance in compact designs.

This K3878 900V 9A Silicon N-Channel MOSFET excels in applications like switched-mode power supplies, DC-to-DC converters, motor control circuits, and uninterruptible power supplies (UPS). Its fast switching speed and low gate charge (60nC typical) enable high-frequency operation, reducing system size and improving efficiency. The TO-3P package ensures easy integration, while its robust silicon construction and silicon dioxide gate oxide layer provide durability under high-speed and high-temperature conditions, up to 150°C.

The K3878 900V 9A Silicon N-Channel MOSFET offers superior reliability with features like low leakage current (100 μA max at 720V) and enhanced dv/dt capability, making it resistant to voltage spikes and transients. Its enhancement-mode design, with a threshold voltage of 2.0 to 4.0V, ensures compatibility with standard control circuits. This MOSFET is a top choice for industries like telecom, automotive, and computing, where efficient power management and high performance are critical.