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IXYS VUB116-16N01

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IXYS VUB116-16N01

IXYS VUB116-16N01

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VUB116-16N01

The VUB116-16N01 from IXYS is a power module designed for industrial applications. It features a three-phase rectifier bridge integrated with an Insulated Gate Bipolar Transistor (IGBT) and a fast recovery diode, allowing it to handle high-voltage and high-current operations reliably. Its compact E2-11 package supports straightforward integration into various systems, suitable for power conversion and braking applications.

The module operates within a temperature range of -40°C to +125°C, ensuring stable performance in demanding environments. It includes soldering connections suitable for PCB mounting and is compatible with wave soldering processes. The module’s design supports high surge current and thermal cycling, making it suitable for continuous industrial operation.

The VUB116-16N01 is suitable for drive inverters with braking systems, combining essential functions in a single package to simplify system design and reduce component count. Its thermal and electrical specifications make it appropriate for industrial and commercial applications requiring reliable performance.

Key Specifications

Feature Specification
Technology Silicon (Si)
Package / Case E2-11
Mounting Style Screw Mount
Configuration Single
Collector-Emitter Voltage (VCEO Max) 1200 V
Continuous Collector Current (Ic Max) 95 A
Maximum Gate-Emitter Voltage ±20 V
Minimum Operating Temperature -40°C
Maximum Operating Temperature +125°C
Height 17 mm
Length 107.5 mm
Width 45 mm
Packaging Bulk
Product Type IGBT Transistor
RoHS Compliant Yes


For more detailed information, please refer to the IXYS VUB116-16N01 datasheet.

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