IXYS MDMA660U1600PTEH 1600V Rectifier Module
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IXYS MDMA660U1600PTEH 1600V Rectifier Module
MDMA660U1600PTEH — Three-Phase Rectifier Module
The MDMA660U1600PTEH is a three-phase rectifier bridge designed for industrial and commercial power-electronics systems. Built on a DCB (direct-bonded copper ceramic) platform and supplied in an E3-Pack chassis, this module provides a repetitive reverse blocking voltage of 1600 V and an average rectified output current of 660 A. It is suitable for DC power supplies, PWM inverter input rectifiers, battery DC systems, and DC motor field supplies.
The MDMA660U1600PTEH offers low forward voltage drop and leakage current to minimize power losses under high load. The typical forward voltage is ≈1.28 V at 220 A (Tj = 25 °C) and up to 1.95 V at 660 A, while the planar passivated chip structure enhances thermal and electrical stability. The module supports total power dissipation of 830 W (Tc = 25 °C) with thermal resistance RthJC = 0.15 K/W and RthCH = 0.075 K/W, enabling efficient thermal management.
The design includes a built-in NTC temperature sensor, press-fit pins for PCB connection, and isolation voltage of 4300 V, ensuring safe operation in various environments. It withstands forward surge currents up to 5.00 kA and operates over a junction temperature range from −40 °C to +150 °C, making it suitable for continuous operation in inverters, UPS units, and industrial rectification systems.
Key Specs
| Parameter | Value |
|---|---|
| Part Number | MDMA660U1600PTEH |
| Manufacturer | IXYS (Littelfuse Technology) |
| Type | 3-Phase Rectifier Bridge + NTC |
| Repetitive Reverse Blocking Voltage (VRRM) | 1600 V |
| Non-Repetitive Reverse Blocking Voltage (VRSM) | 1700 V |
| Average Rectified Current (I_DAV) | 660 A (Tc = 85 °C, rectangular d = 1/3) |
| Forward Voltage (typ / max) | ≈1.28 V @ 220 A (Tj = 25 °C) / 1.95 V @ 660 A |
| Slope Resistance (rF) / Threshold Voltage (Vf0) | rF = 1.8 mΩ; Vf0 ≈ 0.77 V |
| Forward Surge Current (IFSM) | 5.00 kA (10 ms, 50 Hz, Tj = 45 °C) |
| Total Power Dissipation (Ptot) | 830 W (Tc = 25 °C) |
| Thermal Resistance | RthJC = 0.15 K/W; RthCH = 0.075 K/W |
| Junction Capacitance (Cj) | 208 pF (VR = 400 V; f = 1 MHz) |
| Isolation Voltage | 4300 V |
| Operating / Storage Temperature | −40 °C to +150 °C |
| Package | E3-Pack chassis; press-fit pins; DCB baseplate |
| Weight | 270 g |
