IRFBG30 N-Channel MOSFET is a reliable and efficient solution for high-voltage and medium-power applications. With a drain-to-source voltage (Vds) of 1000V and a drain current (Id) of 3.1A, it is designed for switching regulators, power inverters, motor drives, and audio amplifiers. Leveraging third-generation HEXFET technology, this MOSFET offers low on-resistance (5.0Ω) for reduced power losses, fast switching speeds, and ruggedized design for enhanced durability. The TO-220AB package ensures ease of use and efficient thermal management.
Perfect for commercial and industrial applications up to 50 watts, this cost-effective MOSFET supports high-performance operations with simple drive requirements. The device is repetitive avalanche rated and features dynamic dv/dt capability, making it ideal for use in power supplies, lighting control, and other demanding environments.
Datasheet attached. Available across Pakistan, including Karachi, Lahore, Islamabad, Faisalabad, and Peshawar. Contact us for bulk quantities
