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IRF2807 75 V, 82 A N Channel MOSFET

Regular price Rs.150.00
Sale price Rs.170.00
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IRF2807 75 V, 82 A N Channel MOSFET - The Component Centre
IRF2807 75 V, 82 A N Channel MOSFET
Regular price Rs.150.00
Sale price Rs.170.00

IRF2807 – 75 V N‑Channel HEXFET Power MOSFET

The IRF2807 is a robust N‑channel HEXFET power MOSFET rated for up to 75 V drain‑to‑source and specified for a continuous drain current of 82 A (Tc = 25 °C) under typical gate‑drive conditions. With a typical on-resistance of approximately 13 mΩ, it supports efficient switching and reduced conduction losses in power‑electricianic systems.

Encased in a TO‑220AB package, the device offers reliable thermal behavior and a broad operating junction‑temperature range from –55 ° C up to +175 °C. Its design includes a fully avalanche‑rated die, making it resilient under high‑energy transients, and it supports dynamic dv/dt stress. 

The IRF2807 is suitable for use in power conversion circuits such as DC–DC converters, motor‑drive controllers, automotive power management systems, and renewable‑energy inverters. Its gate‑charge characteristics and fast switching response enable precise control in applications where timing and energy efficiency matter. For detailed electrical and thermal characteristics, refer to the manufacturer’s datasheet. 


Key Specs

Parameter Value
 Device type N‑Channel HEXFET Power MOSFET
 Drain‑Source Voltage, V<sub>DSS</sub> 75 V
 Continuous Drain Current (T<sub>C</sub> = 25 °C) 82 A
 On‑Resistance, R<sub>DS(on)</sub> ~13 mΩ typical 
 Total Gate Charge, Q<sub>g</sub> ~140 nC (depending on test conditions) 
 Gate Threshold Voltage, V<sub>GS(th)</sub> 2.0 – 4.0 V (at I_D = 250 µA) 
 Package TO‑220AB 
 Operating Junction Temperature –55 °C to +175 °C 
 Power Dissipation (T<sub>C</sub> = 25 °C) ~200 W (package‑limited)
 Typical Switching Times t_d(on) ~14–18 ns, t_d(off) ~40–47 ns (depends on operating condition)

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