Infineon FP50R12KT4_B11 1200V 25A IGBT Module
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Infineon FP50R12KT4_B11 1200V 25A IGBT Module
FP50R12KT4_B11 — 1200 V IGBT Module
The FP50R12KT4_B11 is a 1200 V IGBT module from Infineon Technologies, designed for use in three-phase inverters, motor drives, brake choppers, and UPS systems. It is part of the EconoPIM2 family and uses Trench/Fieldstop IGBT4 technology with integrated emitter-controlled diodes. The module provides a collector-emitter voltage rating of 1200 V and a continuous collector current rating as specified in the datasheet.
The FP50R12KT4_B11 is characterized by a low collector-emitter saturation voltage, compact switching energy figures, and a small gate charge, which contribute to reduced switching losses. Thermal parameters such as junction-to-case resistance, total power dissipation, and short-circuit withstand times are clearly defined in the datasheet, supporting proper system-level design.
Mechanical and thermal stability make the FP50R12KT4_B11 suitable for industrial and commercial applications. The EconoPIM2 package allows standard mounting and integration into power systems. Operating limits, switching behavior, and recovery characteristics are documented to ensure predictable operation under specified conditions.
Key Specs
| Specification | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Part number | FP50R12KT4_B11 |
| Device type / package | IGBT module (EconoPIM2) |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous DC collector current (IC, nominal) | 25 A (datasheet conditions) |
| Repetitive peak collector current (ICRM) | 50 A |
| Collector-Emitter saturation voltage (VCE(sat)) | typ. 1.85 V (IC = 25 A, VGE = 15 V) |
| Gate charge (QG) | ~0.20 µC (VGE = -15 V … +15 V) |
| Input capacitance (Cies) | ~1.45 nF (f = 1 MHz, Tvj = 25 °C) |
| Total power dissipation (Ptot) | 160 W (TC = 25 °C) |
| Junction-to-case thermal resistance (RthJC) | 0.95 K/W (per IGBT) |
| Gate-emitter peak voltage (VGES) | ±20 V |
| Short-circuit rating (ISC) | 90 A (tP ≤ 10 µs, specified conditions) |
| Maximum junction temperature (Tvj max) | 175 °C |
| Package / dimensions | EconoPIM2 housing (refer to datasheet) |
For more detailed information, please refer to the Infineon datasheet FP50R12KT4_B11 Datasheet (PDF).
