Home Infineon FP50R06W2E3 600V, 65A IGBT Module

Infineon FP50R06W2E3 600V, 65A IGBT Module

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Infineon FP50R06W2E3 600V, 65A IGBT Module

Infineon FP50R06W2E3 600V, 65A IGBT Module

Rs.0.00

FP50R06W2E3 IGBT Module

The FP50R06W2E3 is a robust IGBT module from Infineon built to deliver exceptional performance in power electronics applications. With a collector-emitter voltage rating of 600 V and continuous collector current of around 65 A, it enables efficient high-power switching in demanding environments. Thanks to its Trench/Fieldstop IGBT3 technology paired with a fast, emitter-controlled diode and integrated NTC sensing, the module offers fast switching behavior, low conduction and switching losses, and strong thermal stability.

Designed for durability, the FP50R06W2E3 module operates reliably over a wide temperature range (-40 °C to +150 °C junction temperature) and is housed in the rugged EasyPIM™ 2B module package. Its thermal management is optimized to handle continuous industrial duty cycles while preserving efficiency. This makes it well suited for industrial and commercial use cases such as three-phase inverters, motor drives, UPS systems, solar and renewable energy converters, welding machines, and other demanding power conversion equipment.

Because of its combination of high switching speed, strong thermal tolerance, and a package designed for reliability, the FP50R06W2E3 helps engineers design systems that are smaller, more efficient, and more reliable. Its benefits include reduced downtime, improved energy efficiency, less heat generation, and overall lower total cost of ownership. Whether for continuous industrial operation or for commercial settings where performance under stress is required, this module stands out as a dependable solution.


Key Specs

Parameter Specification
Manufacturer Infineon Technologies
Part Number / Series FP50R06W2E3 (EasyPIM™ 2B, IGBT3)
Collector-Emitter Voltage (Vces Max) 600 V 
Continuous Collector Current (Ic) 65 A 
Power Dissipation (Tc = 100 °C) ~175 W 
Maximum Junction Temperature (Tj max) +150 °C
Gate-Emitter Voltage (Vge Max) ±20 V 
Collector-Emitter Saturation Voltage (Vce(on) Max) ~1.45 V (at nominal operating conditions)
Thermal & Package Details EasyPIM™ 2B module package — robust chassis-mount module design 
Operating Temperature Range −40 °C to +150 °C junction temperature 

For more detailed information, please refer to the Infineon datasheet.

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