Infineon FP35R12W2T4-B11 1200V 35A IGBT Module

FP35R12W2T4-B11 IGBT Module

The FP35R12W2T4-B11 is a powerful IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, engineered for high-efficiency switching and robust performance under demanding power electronics applications. Equipped with Trench/Fieldstop IGBT4 technology and a fast, emitter-controlled diode, it offers excellent turn-on/turn-off behavior and very good thermal performance, making it suitable for modern inverter, converter, and drive systems.

Designed with a collector-emitter breakdown voltage (Vces) of 1,200 V and a continuous collector current of about 35 A, this module is ideal for mid-power industrial tasks. With low saturation voltage and low switching losses, the FP35R12W2T4-B11 delivers high electrical efficiency and reduced heat generation. 

Durability is central to its design: it operates reliably across a wide temperature range (-40 °C to +150 °C junction temperature), comes in a rugged package (EasyPIM), and includes a diode and NTC (temperature sensing) features for enhanced protection. These traits make it well suited for industrial and commercial use in applications such as motor drives, UPS systems, solar inverters, welding machines, and general-purpose power converters.

By combining high switching speed, thermal robustness, and package reliability, the FP35R12W2T4-B11 enables engineers to build systems that are more compact, faster, and more energy efficient. Whether in continuous industrial duty or commercial applications, it excels in reducing downtime, improving power factor, and ensuring stable, long-term operation.

Key Specs

For more detailed information, please refer to the Infineon datasheet.