
Infineon FP15R12W1T4 1200V, 28A 3 Phase Bridge IGBT Module
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Infineon FP15R12W1T4 1200V, 28A 3 Phase Bridge IGBT Module
Infineon FP15R12W1T4 IGBT Module – 1200 V, ~28–30 A, EasyPIM 3-Phase Bridge
The Infineon FP15R12W1T4 is a three-phase bridge IGBT module configured in the EasyPIM™ 1B format. With a maximum collector-emitter voltage rating of 1,200 V and continuous current capacity around 28–30 A, it is tailored for compact inverter and motor-drive systems.
This module includes a built-in three-phase diode bridge and emitter-controlled diode configuration, streamlining circuit design while reducing part count. It supports a max pulsed collector current of 30 A, offers 130 W of power dissipation, and operates reliably between –40 °C and +150 °C.
The FP15R12W1T4 also features an integrated NTC thermistor and requires screw-mounting. Its technical design suits compact power electronics systems where thermal efficiency and simplified integration are important.TMETME
Key Specifications – FP15R12W1T4
Specification | Value |
---|---|
Collector–Emitter Voltage (V<sub>CE</sub>) | 1,200 V |
Continuous Collector Current (I<sub>C</sub>) | ~28 A (25 °C) |
Pulsed Collector Current | 30 A |
Power Dissipation (P<sub>d</sub>) | 130 W |
Package Type / Technology | EasyPIM™ 1B 3-phase bridge with NTC thermistor |
Operating Temperature Range | –40 °C to +150 °C |
Diode Bridge | Integrated three-phase bridge |
Mounting Style | Screw-mount (flange) |
Typical Applications | Inverters, motor drives, power electronics |