Infineon FP10R12YT3-B4 — 1200 V / 10-16 A IGBT Module
The Infineon FP10R12YT3-B4 is an IGBT (Insulated Gate Bipolar Transistor) module engineered for stable power switching in industrial and commercial systems. With a collector-emitter voltage rating of 1200V and a continuous collector current of about 10-16A depending on configuration, this module suits medium power applications where efficiency, reliability, and thermal stability are required.
Designed for environments such as motor drive systems, power inverters, UPS units, and industrial automation equipment, the FP10R12YT3-B4 provides consistent performance through its robust module layout. It supports flange-mount installation, an isolated case design for easier integration, and well-defined turn-on/turn-off times to support switching frequency demands with manageable switching loss.
As part of Infineon’s product line, this module is suited to both new designs and replacement parts. It offers efficient conduction characteristics, compliance with RoHS, and electrical parameters that enable operation under moderate temperature ranges. Engineers can rely on this module for applications that demand durability, accurate behavior under switching, and stable voltage blocking.
Key Specs
| Specification |
Value |
| Manufacturer |
Infineon Technologies
|
| Part Number |
FP10R12YT3-B4
|
| Module Type |
Discrete / IGBT Module
|
| Collector-Emitter Voltage (V<sub>CE</sub>) |
1200 V
|
| Collector Current (I<sub>C</sub>) |
~10-16 A (varies by condition) |
| Configuration |
Complex / multiple elements
|
| Turn-On Time (typical) |
~70 ns |
| Turn-Off Time (typical) |
~540 ns
|
| Package / Mounting Style |
MODULE-23, flange mount, isolated case
|
| Case Isolation |
Isolated
|
| Maximum Operating Temp / Range |
-40 °C to +125 °C
|
| Saturation Voltage (V<sub>CE(sat)</sub>) |
~1.9 V
|
| Gate-Emitter Voltage |
±20 V typical for IGBT modules (standard)
|
For full electrical, thermal, mechanical, and switching-curve data, please refer to the FP10R12YT3-B4 Datasheet (PDF)