FF50R12RT4 IGBT Module
The FF50R12RT4 is a robust and efficient 1200V, 50A IGBT module developed by Infineon Technologies. Utilizing the advanced Trench Fieldstop IGBT4 technology, this module delivers exceptional performance in demanding power electronic applications. Its design ensures low switching losses and high reliability, making it ideal for use in industrial motor drives, uninterruptible power supplies (UPS), and photovoltaic inverters.
Engineered for high thermal stability, the FF50R12RT4 operates effectively within a temperature range of -40°C to +150°C, accommodating various environmental conditions. The module's compact 34mm package facilitates efficient heat dissipation and simplifies integration into power systems. Its isolated base plate and standard housing ensure secure mounting and compatibility with existing designs.
With a collector-emitter voltage (V_CEO) of 1200V and a continuous collector current (I_C) of 50A, the FF50R12RT4 provides a power dissipation capability of 285W. These specifications, coupled with its low collector-emitter saturation voltage (V_CEsat) and positive temperature coefficient, contribute to its energy efficiency and durability in high-power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CEO) | 1200V |
| Continuous Collector Current (I_C) | 50A |
| Repetitive Peak Collector Current (I_CRM) | 100A (1ms pulse) |
| Power Dissipation (P_tot) | 285W |
| Collector-Emitter Saturation Voltage (V_CEsat) | 1.85V |
| Gate-Emitter Voltage (V_GE) | ±20V |
| Operating Temperature (T_jop) | -40°C to +150°C |
| Package Type | 34mm Module |
| Technology | Trench Fieldstop IGBT4 |
| Mounting Style | Screw Mount |
For more detailed information, please refer to the Infineon FF50R12RT4 datasheet.
