Infineon FF300R12ME4 1200V 300A IGBT Module
Guarantee Safe Checkout
Infineon FF300R12ME4 1200V 300A IGBT Module
FF300R12ME4 IGBT Power Module – 300A, 1200V Dual Configuration
The FF300R12ME4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for industrial and commercial power electronics applications. With a collector-emitter voltage of 1200V and a continuous collector current of 300A, it delivers reliable performance in high-power switching operations.
This module features a dual IGBT configuration, enabling efficient handling of high voltage and current. It supports repetitive peak forward currents up to 600A and offers a total power dissipation of 1600W at 25°C. With a gate-emitter voltage tolerance of ±20V, the FF300R12ME4 ensures stable and precise switching performance.
Typical applications include motor drives, inverters, uninterruptible power supplies (UPS), renewable energy systems, and industrial automation equipment. Its robust electrical and thermal characteristics make it ideal for demanding environments requiring consistent power handling and long-term reliability.
Key Specifications
| Feature | Specification |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200V |
| Continuous Collector Current (Ic) @ 25°C | 300A |
| Repetitive Peak Forward Current (Ifrm) | 600A (1ms, Tc = 80°C) |
| Total Power Dissipation (Ptot) | 1600W @ 25°C |
| Gate-Emitter Voltage (Vges) | ±20V |
| Module Configuration | Dual IGBT |
| Switching Type | High-power switching / fast response |
| Applications | Motor drives, inverters, UPS, renewable energy systems, industrial automation |
