Infineon FF300R12KT4 1200V, 300A IGBT Module
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Infineon FF300R12KT4 1200V, 300A IGBT Module
FF300R12KT4 IGBT Module
The FF300R12KT4 is a high-power IGBT module designed to combine strong performance, reliability, and efficiency for demanding industrial and commercial power electronics. With a collector-emitter voltage rating of 1,200 V and a continuous current of 300 A, it delivers robust switching under load. Its trench / field-stop IGBT4 technology along with an optimized EmCon diode helps to reduce switching losses and improve thermal stability.
Reliability is a core feature: the module can handle junction temperatures up to 175 °C, supports high surge currents, and is built in a rugged C-series 62 mm housing. Its low saturation voltage, fast response times and well-managed thermal resistances make it suited for continuous operation in harsh environments.
Typical applications include motor drives, industrial inverters, UPS systems, electronic welders, power converters, and variable speed drives. The FF300R12KT4 is suitable for both industrial and commercial systems where efficiency, durability, and minimal downtime are required. Integration is easier thanks to its standard module packaging and high insulation ratings, making it a reliable choice for high power switching.
Key Specs
| Specification | Value / Description |
|---|---|
| Module Type | Trench / Field-Stop IGBT4 Module |
| Voltage Rating (Collector-Emitter, V<sub>CES</sub>) | 1,200 VÂ |
| Continuous Collector Current (I<sub>C</sub>) | 300 A at rated conditions |
| Pulsed / Peak Collector Current (I<sub>CRM</sub>) | ~ 600 A for short pulses (1 ms) |
| Saturation Voltage V<sub>CE(sat)</sub> (typical) | ~1.75-2.15 V under standard test conditions (300 A, V<sub>GE</sub>=15V)Â |
| Gate-Emitter Voltage (V<sub>GE</sub>) | ±20 V peak |
| Junction Temperature (T<sub>j</sub>) Max | 175 °C |
| Operating Temperature Range | −40 °C to +150 °C (switching conditions) |
| Input Capacitance (C<sub>ies</sub>) | ~19 nF at 1 MHz, 25 °C |
| Thermal Resistance, Junction-to-Case (R<sub>thJC</sub>) | ~0.093 K/W per IGBT switch |
| Dimensions / Package Type | 62 mm C-series housing, standard module package, isolated module case |
