
Infineon F3L150R07W2E3_B11
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Infineon F3L150R07W2E3_B11
Infineon F3L150R07W2E3_B11
The Infineon F3L150R07W2E3_B11 is a high-efficiency EasyPACK™ 2B IGBT module designed for advanced three-level inverter systems, solar inverters, UPS units, and industrial motor drives. Engineered using Infineon’s Trench/Fieldstop IGBT3 technology and equipped with an emitter-controlled diode, it delivers outstanding switching performance, low power losses, and high reliability. With a collector-emitter voltage of 650 V and a continuous collector current of 150 A, this module provides consistent power delivery in demanding environments, making it ideal for high-performance and space-efficient energy systems.
Built for superior efficiency and thermal stability, the F3L150R07W2E3_B11 minimizes conduction and switching losses while maintaining excellent temperature control through an Al₂O₃ substrate and low junction-to-case thermal resistance of approximately 0.40 K/W. Its optimized internal design ensures low stray inductance and controlled switching behavior, improving overall inverter performance. The PressFIT contact pins simplify assembly and guarantee reliable electrical connections, while the integrated mechanical clamps enhance structural durability and ease of installation.
Thanks to its robust short-circuit capability, wide operating junction temperature range (-40 °C to +150 °C), and optional NTC temperature sensor, this Infineon module ensures safe, long-term operation even under high-stress conditions. It is ideally suited for renewable energy systems, industrial automation, and high-efficiency motor control where power density, reliability, and thermal performance are critical. The F3L150R07W2E3_B11 stands out as a dependable and efficient power module for next-generation inverter and drive solutions.
Key Specs
Parameter | Value |
---|---|
Manufacturer | Infineon Technologies |
Product / Package | F3L150R07W2E3_B11 — EasyPACK™ 2B IGBT Module |
Technology | Trench / Fieldstop IGBT3 with Emitter-Controlled Diode |
Collector-Emitter Voltage (VCES) | 650 V |
Continuous Collector Current (IC) | 150 A (TC = 25 °C) |
Repetitive Peak Collector Current (ICRM) | 300 A |
Typical VCE(sat) | ≈ 1.45 V @ IC = 150 A, VGE = 15 V |
Total Power Dissipation (Ptot) | 335 W (TC = 25 °C) |
Gate-Emitter Peak Voltage (VGES) | ±20 V |
Gate Charge (QG) | ≈ 1.6 µC |
Internal Gate Resistor (RGint) | ≈ 2.0 Ω |
Thermal Resistance (RthJC per IGBT) | ≈ 0.40 K/W |
Operating Junction Temperature | -40 °C to +150 °C |
Short-Circuit Capability (ISC) | High; compliant with Infineon specifications |
Mounting / Features | PressFIT contacts, Al₂O₃ substrate, integrated clamps, optional NTC sensor |
For detailed electrical characteristics and mechanical drawings, refer to the official Infineon F3L150R07W2E3-B11 Datasheet